CURRICULUM VITAE

Personal details:
Name: Dr. Béla Pécz
Gender: male
Nationality: Hungarian
Born: 16th Aug. 1961, Celldömök, HUNGARY
Marital status: married, with two children (daughter, 1994 and son 1999)

Address:
Institute of Technical Physics and Materials Science
Hungarian Academy of Sciences Centre for Energy Research
H-1525 Budapest, P.O.Box 49, Hungary

Phone.: 36-1-392-2587
Fax: 36-1-392-2226
E-Mail: pecz@mfa.kfki.hu

Education and degrees:
1985 - Diploma in Physics at the Roland Eötvös University, Budapest, Hungary
1993 - Ph.D., Hungarian Academy of Sciences
2004 - D.Sc. Hungarian Academy of Sciences

Current Position:
Head of the Thin Film Physics Laboratory from 01/09/2013

Former position:
Deputy director from 01/03/2004
Head of the Thin Film Physics Laboratory from 01/01/2000
Senior research fellow from 1992

Research topics:
• Transmission Electron Microscopy, Ion milling of samples for TEM
• SiC on Si and contacts to SiC, III-nitrides, Defects in semiconductors

Project leader of:
1) Hungarian National Research Project OTKA No.: F007612 (finished in 1995)
2) Hungarian National Research Project OTKA No.: T014255 (finished in 1996)
3) PHARE ACCORD H 9112-0373 (finished in 1994)
4) PHARE TDQM HU-9305-02/1086 (finished in 1997)
5) Greek-Hungarian TéT, GR-33/96
6) French-Hungarian TéT, F-36/97
7) EU-98-B4-144
8) Hungarian National Research Project OTKA T 030447 (finished in 2003)
9) Hungarian National Research Project OTKA T 047141
10) Hungarian National Research Project OTKA T 75735 (finished in 2013)
11) Hungarian National Research Project OTKA K 108869 (2014-2017)
12) Hungarian project leader of COPERNICUS CP 940603 (finished in 1996)
13) Hungarian subcontractor of RAINBOW BRITE/EURAM 3 (No. BRPR960340)
14) Hungarian project leader of EURONIM GRD1-2000-25803. (finished in 2004)
15) Hungarian project leader of NAPILIS NMP3-CT-2003 505622 (finished in 2007)
16) Hungarian project leader of HYPHEN 027455 (finished in 2008)
17) Hungarian project leader of MORGaN 214610 (2008-2011)
18) Hungarian project leader of ROD-SOL 227497 (2009-2011)
19) Hungarian project leader of Greek-Hungarian TéT 10-1-2011-0570 (2012-2014)
20) Hungarian project leader of DARPA/ONR Global Award No. N62909-13-1-N210 (2013-2014)
21) Hungarian project leader of GRIFONE FLAG-ERA project (2016-2018)

Publications:
I am the author and co-author of 140 papers in international journals and papers in conference proceedings. I have received 1630 independent citations.
5 most important publications:
• A. Barna, B. Pécz and M. Menyhard: Amorphisation and surface morphology development at low energy ion milling, Ultramicroscopy, 70 (1998) 161-171 (IF: 2.244 citations: 68)
• B. Pécz, Zs. Makkai, M. A. di Forte-Poisson, F. Huet and R. E. Dunin-Borkowski: V shaped defects connected to inversion domains in AlGaN layers, Appl. Phys. Lett. 78 (2001) 1529-1531
(IF: 4.184 citations: 37)
• B. Pécz: Contact formation in SiC devices, Appl. Surf. Sci., 184 (2001) 287-294
(IF: 1.222 citations: 35)
• B. Pécz, A. El-Shaer, A. Bakin, A.-C.Mofor, A. Waag and J. Stoemenos: Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer, J. of Appl. Phys., 100 (2006) 103506 (7 pages) (IF: 2.5 citations: 15)
• András Kovács, Martial Duchamp, Rafal E. Dunin-Borkowski, Rositza Yakimova, Péter L. Neumann, Hannes Behmenburg, Bartosz Foltynski, Cristoph Giesen, Michael Heuken and Béla Pécz: Graphoepitaxy of High-Quality GaN Layers on Graphene/6H–SiC, Advanced Materials Interfaces, published online: 22 DEC 2014 | DOI: 10.1002/admi.201400230

Selected invited talks:
2001 EMRS Spring Meeting, Strasbourg
2002 EXMATEC, Budapest
2002 ICTF04, Bratislava
2007 ICMCTF, San Diego
2010 JVC13, Slovakia
2014 ICTF16, Dubrovnik
2014 EMRS/V4/Japan workshop, Warszawa
2015 MSM19, Cambridge

Stays abroad:
3 month in 1993, University of Oxford, Dept. of Materials
6 month in 1994, University of Oxford, Dept. of Materials
2 month in 1998, Aristotle University of Thessaloniki
2 month in 2002, FZ Rossendorf, Germany

Memberships:
IUVSTA Hungarian National Committee
Hungarian Society for Microscopy (president)
Eötvös Loránd Physical Society (head of a section)
Böhmische Physical Society (USA)
Royal Microscopical Society (UK)
Representative of Doctors of the Hungarian Academy of Sciences
Member of the E-MRS Executive Committee

Awards:
Outstanding Young Investigator of the Academy, 1993
Award of the György Ferenczi Foundation, 1996
Award of the Hungarian Society of Electron Microscopists, 1997
Gyorgy Szigeti Award of the Hungarian Physical Society, 2000
Bolyai Medal, Hungarian Academy of Sciences, 2007
Prize of the Hungarian Academy of Sciences, 2011
OTKA Ipolyi Arnold prize, 2013

Languages:
English (state certificate medium level), communication ability in German.

First he started to work for the Microwave Department of the Institute dealing with contacts to III-V semiconductors (GaAs, InP, …). He learned very soon, that transmission electron microscopy (TEM) is a very powerful technique, therefore he changed gradually for that and then even joined the Department of Structural research. He learned a lot from G. Radnóczi and A. Barna and got the PhD (Candidate of Sciences) in 1993.
In the same year he spent 3 month and in the following one further 6 month in Oxford at the Department of Materials. The change in his research subject is dated for that period as well, i.e. He started to work on wide bandgap semiconductors.
First he worked on SiC. This part included the growth of cubic SiC on silicon, then the investigation of small SiC crystallites formed on Si by annealing in CO gas. Also he participated in Swedish space experiments in which SiC was grown at microgravity conditions.
In that period the high temperature stable contacts to SiC were still an issue and he investigated epitaxial Ti Non SiC. He also analysed the widely used Ni contacts to SiC, observed the Ni2Si phase in them. He pointed out that the Al/Ti metallization used to p-type SiC can result is a short connection of the device via the ternary phase formed during annealing.
TEM studies need a transparent and artefact –free sample. He wrote (together with A. Barna) first a sample preparation chapter to Handbook of Microscopy, and then they wrote a paper in Ultramicroscopy suggesting a sample preparation way in order to avoid the artefact formation.
He was very lucky to participate in GaN research. First he pointed out that nitridation of sapphire leads to the formation of AlN thanks to a reaction of ammonia and sapphire. He investigated AlGaN/GaN superlattices and pointed out how the inversion domains influence the surface morphology.
He participated in a project (EURONIM) in which they could increase substantially the lifetime of the European blue laser diode (prepared by OSRAM).
He made epitaxial diamond grains in SiC by ion implantation (by the help of Rossendorf Large Scale facility).
His work on GaN was shifted to high power devices (HEMT transistors). He investigated polycrystalline diamond which was deposited by CVD onto the surface of the devices (after passivation). Then he investigated GaN transistors directly grown onto single crystalline diamond by MBE (at FORTH, Greece). The latter one proved to be the best solution for heat management in high power GaN devices. Then he managed to grow high quality GaN on patterned graphene/SiC templates.