Péter B. Barna
Hivatkozások/Scitations
2004. máj. 1.

10. E.F. Pócza, P.B. Barna:
Epitaxial growth of vacuum-deposited double indium films
Proc. of III. European Regional Conference on Electron Microscopy, Prague, 1964. p. 385-386.

1. 1. Boulestic: J.I. Metals A 93, 1161 (1965)
2. 2. Boulestic: J.Vac.Sci. and Technol. 6, 780 (1969)

11. R.Grigorovici, N.Croitoru, Á.Dévényi, L.Vescan, P.Barna:
Electrical properties of evaporated Si and Ge layers
Rev. Roum. Phys. 10, 649-656. (1965)

1. 3. P.A. Walley: Thin Solid Films 2, 327 (1968)
2. 4. M.H. Brodsky: Phys.Rev.B. 1, 2632 (1970)
3. 5. D. Ader: Amorphous Semicond., London, Butterworth (1972)
4. 6. G.K. Thutupalli, S.G. Tomkin: J.Phys.C. 10, 467 (1977)
5. 7. Sulitanu N: Mat. Sci. Eng. B-SOLID 83 (1-3): 84-88 JUN 21 2001

12. E.F. Pócza, Á. Barna, P.B. Barna:
Investigations of growth mechanism of vacuum deposited indium layers by statistical methods
Proc.Coll.Thin Films, 97. (Ed: E.Hahn, Akad.Kiadó, Bp.1965)

1. 8. Yu.A.Kuliupin: Inst.Phys, Ukr SSR Ac.Sci. Kiev (1971) 7.

14.1 Á.Barna, P.Barna, J.Pócza, N.Croitoru, A.Dévényi, R.Grigorovici:
Structural properties of vacuum-deposited germanium layers
Finommechanika 4, 241-244. (1965)

1. 9. T. Betko: Elektrotechnicky Casopis XXIII, 331 (1972)

14.2 Á. Barna, P.B. Barna, E.F. Pócza, N. Croitoru, Á. Dévényi, R. Grigorovici
Structural properties of vacuum-deposited Ge layers
Proc.Coll.Thin Films, 49. (Ed: E.Hahn, Akad.Kiadó, Bp.1965)

1. 10. M.H. Brodsky: J.Vac.Sci.Techn. 8, 125 (1971)
2. 11. Csanády Andrásné: Szilárd testek vizsgálata elektronokkal, ionokkal és röntgensugárral (Szerk: O.Brünner, J.Heidenreich, K.M.Krebs, H.G.Schneider, Mûszaki Könyvkiadó, Bp. 1984)

16. E.F. Pócza, Á. Barna, P. Barna:
Nucleation and growth processes in vacuum deposited Ge films
Proc. of the Int. Symp. Basic Problems of Thin Film Physics, Clausthal-Göttingen, p. 153-156. (Ed: R. Niedermayer and M. Mayer, VANDENHOECK and RUPRECHT) (1966)

1. 12. 1. K. Müller: Z.Phys. 195, 105 (1966)
2. 13. 2. G. Perny, P. Vandenbe: CR. AC. SCI C 263, 801 (1966)
3. 14. 3. P. Vandenbe, G. Perny: J. Physique 27, 748 (1967)
4. 15. 4. B.K. Chakrave: I. Phys. Chem. S. 28, 2413 (1967)
5. 16. 5. N. Emerik, A. Emerik: Thin Solid Films 1, 13 (1967)
6. 17. 6. K. Müller, G. Schimpf. 22 a, 1814 (1967)
7. 18. 7. P.A. Walley, A.K. Jonscher: Thin Solid Films 1, 367 (1967)
8. 19. 8. R. Grigorovici: Mat. Res. Bull. 3, 13 (1968)
9. 20. 9. P.A. Walley: Thin Solid Filma 2, 327 (1968)
10. 21. 10. R. Broll, P. Graber, K.G. Weil: Thin Films 1, 109 (1968)
11. 22. 11. A.K. Joncher, P.A. Walley: J. Vac. Si. Techn. 6, 622 (1969)
12. 23. 12. T. Inuzuka, R. Ueda: J. Vac. Sci. Tehn. 6, 379 (1969)
13. 24. 13. J.Bruneaux, A.Defrain, N.T.Linh:J.Chim.Phys.L60, 991 (1969)
14. 25. 14. S.M. Laville, G. Perny: Thin Solid Flms 4, 319 (1969)
15. 26. 15. S. M. Laville: Thin Solid Films 6, 359 (1970)
16. 27. 16. M. Hecqu, J. Vancaken: Phys. Stat. Sol. a 1, 53 (1970)
17. 28. 17. M. Morgan, A.K. Jonscher: Thin Solid Films 9, 67 (1971)
18. 29. 18. W.Fuhs, H.J.Hesse, K.H.Langer: Prc.5th Int. Conf. Amorphous and Liquid Semicond. Garmisch-Partenkirchen 1973/V.I. 79
19. 30. 19. H.Goebel, K.Dettmer, F.R.Kessler: Phys.Stat.S-A 16, 61 1973
20. 31. 20. B. Laville Saint Martin- G. Perny: Shema Reactionnel des Processus de "Germiation-Croissance" de Couches Minces Synthetisees par Condensation de Plasma Frois p. 141

20.1 Á. Barna, P.B. Barna, J. Pócza:
Processes of "liquid-like behaviour" of crystallites in vacuum deposited thin films
Proc. VII. Int. Congr. on Crystal Growth, Moscow, 1966.

1. 32. 1. K.L. Chopra: Nucleation Growth and Struture of Films (könyv) 1969. p. 169, 182, 257.

20.2 Á. Barna, P.B. Barna, E.F. Pócza:
Processes of "liquid-like behaviour" of crystallites in vacuum-deposited thin films (in Russian)
Roszt Krisztallov 8, 124-139. (1968)

1. 33. 1. M.T. Gladkih: Dopovidi Akad.Nauk.Ukrainszki RSR 344 (1971)
2. 34. 2. Ty. Lyubimov: Dokl. Akad. Nauk. SSSR 190, 1410 (1970)
3. 35. 3. L.S. Palatnyik, M.J. Fuksz, V.M. Koszevics: Mechanizm Obrazovanija i szubsztrktura kondrnszirovannüh pljonok Nauka, Moszkva 1972.
4. 36. 4. A.J. Sheinkma, V.M. Kasperov: J.Appl.Chem. 47, 1763 (1974)
5. 37. 5. B. Petretis: Thin Solid Films 85, 301 (1981)

21. Á. Barna, P.B. Barna, J.F. Pócza:
Design of a new vacuum deposition specimen holder for an electron microscope operating at 10-8 torr
Vacuum, 17, 219-221. (1967)

1. 38. 1. H.J. Forth, W. Loebe: Siemens Rev. XXXVI. 11 (1969)
2. 39. 2. K.H. Bernhdt: J. Vac. Sci. Techn. 6, 439 (1969)
3. 40. 3. H.J. Forth, W. Loebe: Vacuumtechn. 18, 135 (1969)
4. 41. 4. M.J.Stowell, et.al.: Proc.Roy.Soc.London 318, 231 (1970)
5. 42. 5. U.Valdré, et.al.: J. Phys. E. 3 501 (1979)
6. 43. 6. M.J. Stowell: Thin Solid Films 12, 341 (1972)
7. 44. 7. J.A. Venables: Proc. 5th European Congr.on Electron Microscopy, Manchester, 1972 p.344
8. 45. 8. H. Poppa, et.al: J. Vac. Sci. Techn. 11, 132 (1974)
9. 46. 9. D.W. Pashley: Epitaxial Growth, Part A, Ed.: J.W. Matthews, Academic Press, New York, 1975 (p.2.)
10. 47. 10. H. Poppa: Epitaxial Growth, Part A, Ed.: J.W. Matthews, Academic Press, New York, 1975 (p.215)
11. 48. 11. M. Harsdorff: Thin Solid Films 32, 13 (1976)
12. 49. 12. A.P. Ostranuca: Tezisii dokladov h v seroznoj konferencii po elektronnoj mikoskopii Taskent, 1976 (Cs.I.Sz.277)
13. 50. 13. P. Gardenne, G. Vuye: J. Phys. E. 10, 733 (1977)
14. 51. 14. P. Gardenne: Thin Solid Films 42, 369 (1977)
15. 52. 15. R. Kern: B Mineral 101, 202 (1978)
16. 53. 16. K. Takayanagi, K. Yagi: J. Phys. E. 11, 441 (1978)
17. 54. 17. T. Yanagiahara: Surf. Sci. 86, 62 (1979)
18. 55. 18. B. Jouffrey: Phys. Stat. Sol. a 55, 549 (1979)
19. 56. 19. R. Kern: Current topics in material science, Vol.3, Ed.: E. Kaldis, North Holland Publ. Co. Amsterdam, 1979 (p.131)
20. 57. 20. H.J. Forth, W. Loebe: Siemens Aktiengesellschaft 1968.
21. 58. 21. M. Harsdorff: Thin Sol. Films 90, 1 (1982)
22. 59. 22. P. Gardenne: J. Microsc. S. 12. 477. (1987)
23. 60. 23. J.J.Metois, et.al.: Ultramicroscopy 27. 349 (1989)
24. 61. 24. F.S.Aires, et al.: J.Phys.D: Appl.Phys. 25. 309-314 (1992)
25. 62. 25. R. Anton, Ultramicroscopy, 41, 303 (1992)
26. 63. 26. M.T.Marshall: Rev.Sci.Ins. 69 (1998) 440.
27. 64. 27. R.D.Fedorovich, A.G.Naumovets, P.M.Tomchuk: Physics Reports, Rev.Sect.Phys.Lett. 328 (2000) 74-179.

29. Á. Barna, P.B. Barna, J.F. Pócza:
Formation processes of vacuum-deposited indium films and thermodynamical properties of submicroscopic particles observed by "in-situ" electron microscopy
J. Vac. Sci. Techn. 6, 472-474. (1968)

1. 65. 1. K.H. Behrndt: J. Vac. Sci. Techn. 6, 439 (1969)
2. 66. 2. T. Inuzuka, R. Ueda: J. Vac. Sci. Techn. 6, 379 (1969)
3. 67. 3. M. Blackman, J.R. Sambles: Nature 226, 938 (1970)
4. 68. 4. R.C.Reid, et.al.: IND ENG CH R 62, 52 (1970)
5. 69. 5. J.R. Sambles: Proc. Roy. Soc. London A 324, 339 (1971)
6. 70. 6. M.T. Gladkih, V.G. Khotkevi: DOP UKR A 1971 344 (1971)
7. 71. 7. K.Takayanagi,K.Yagi,K.Kobayashi:J.Phys.Soc.Jap.32, 580 (1972)
8. 72. 8. L.S. Palatnyik, M.J. Fuksz, V.M. Koszevics: Mechanizm obrazovanija i szubsztruktura kondenszirovannüh pljonok, Nauka, Moszkva, 1972
9. 73. 9. H.P. Singh, L.E. Murr: Phil. Mag. 26, 649 (1972)
10. 74. 10. C.J. Coombes: J. Phys. F. 2, 441 (1972)
11. 75. 11. L.M. Skinner, J.R. Sambles: Aerosol Sci. 3, 199 (1972)
12. 76. 12. N.T. Gladkih: Thin Solid Films 16, 257 (1973)
13. 77. 13. K. Takayanagi et.al.: J. Cryst. Growth 24/25, 302 (1974)
14. 78. 14. G.S. Zhdanov: JAN SSSR FIZ 38, 1472 (1974)
15. 79. 15. R.P. Berman, A.E. Curzon: Can. J. Phys. 52, 923 (1974)
16. 80. 16. K. Takayanagi, et.al.: J. Cryst. Growth 28, 343 (1975)
17. 81. 17. S.J.Peppiatt, J.R.Sambles:Proc.Roy.Soc.A 345, 387 (1975)
18. 82. 18. G.S. Zhdanov: Teziszü dokladov X. Vszeszauznoj Kkonf. po Eletronnoj Mikroszkpii, Taskent, 1976 (Cs.I.sz.252).
19. 83. 19. P.A. Buffat: Thin Solid Films 32, 283 (1976)
20. 84. 20. P.A. Buffat, J.P. Borel: Phys. Rev. A 13, 2287 (1976)
21. 85. 21. F. Marinell, A. Julg, G. Abette: Surf. Sci. 59, 319 (1976)
22. 86. 22. J.I. Treu: Appl. Optics 15, 2746 (196)
23. 87. 23. G.S. Zhdanov: Fiz. Tved. Tela 18, 1415 (1976)
24. 88. 24. P.R. Couchman, W.A. Jesser: Nature 269, 481 (1977)
25. 89. 25. G.S. Zhdanov: Fiz. Tved. Tela 19, 296 (1977)
26. 90. 26. G.S. Zhdanov: IAN SSSR FIZ 41, 1004 (1977)
27. 91. 27. J.Cardoso, M.Harsdorff:Z.für Naturforschung 33, 442 (1978)
28. 92. 28. T. Yanagiahara: Surf. Sci. 86, 62 (1979)
29. 93. 29. J.F.Quinson, M.Brun, C,Eyraud: J.Chem. Phys. 76, 857 (1979)
30. 94. 30. D.K. Murti: J. Vac. Sci. Techn. 16, 226 (1979)
31. 95. 31. C.Hono, K.Yagi: Current Topics in Mat.Sci.6, 195-307 (1980)
32. 96. 32. M.S. Rahman: MICRON 113, 273 (1982)
33. 97. 33. A. Figureas: Thin Solid Films L 103,L 51 (1983)
34. 98. 34. E. Bertran: Thin Solid Films 129, 103 (1985)
35. 99. 35. J.R. Sambles: J. Phys. Ch. S. 46, 525 (1985)
36. 100. 36. Mieko Takagi: J. Phys. Soc. Japan, 55, 3484-87 (1986)
37. 101. 37. G.L.Allen, et.al.: Thin Solid Films 144. 297-308 (1986)
38. 102. 38. Csanády Andrásné: Szilárd testek vizsgálata elektronokkal, ionokkal és röntgensugárral (Szerk.: O.Brünner, J.Heidenreich, K.M.Krebs, H.G.Schneider, Mûszaki Könyvkiadó, Bp. 1984) 239.old.
39. 103. 39. Berényi D., Gergely Gy., Giber J.: A felületkutatás helyzete hazánkban, A szilárdtestkutatás újabb eredményei hazánkban 24. kötet, (Akadémiai Kiadó, Budapest, 1992)
40. 104. 40. Oshima Y. Z Phys D 27 287 1993
41. 105. 41. Figueiredo MO. X-ray Spect 22 248 1993
42. 106. 42. H.Gleiter: Z.Metallkun 86 (1995) 78.
43. 107. 43. Johari G.P.: Phil.Mag.A 77 (1998) 1367
44. 108. 44. Peters K.F.: Phys.Rev.B 57 (1998) 3430
45. 109. 45. Harmat P, Kotsis I, Laczko L, Bartha L: Solid State Ionics 141 (2001) 157-161, Sp. Iss.
46. K. K. Nanda, S. N. Sahu, and S. N. Behera Phys. Rev. A 66, 013208 (2002)

30. Á. Barna, P.B. Barna, J.F. Pócza:
Some remarks on the epitaxial growth of films on substrates coated with amorphous deposits
Thin Solid Films 4, R32-36. (1969)

1. 110. 1. L.L. Aksenova, et.al.: Fiz. Tverd Tela 5, 1633 (1973)
2. 111. 2. G.I.Distler, et.al.: Fiz.Tverd.Tela 14, 682 (1972)
3. 112. 3. G.I.Distler: Izv.Akad.Nauk SSSR, Ser.Fiz. 36, 1864 (1972)
4. 113. 4. G.I.Distler, et.al.: Kristallografija 17, 634 (1972)
5. 114. 5. G.I. Distler, et.al.: Naturwissenschaften 58, 564 (1971)
6. 115. 6. G.I. Distler, et.al.: Thin Solid Films 10, 195 (1972)
7. 116. 7. I. Dumlier, M.R. Marrapod: Thin Solid Films 12 279 (1972)
8. 117. 8. O.S. Heavens: Nature 228, 1036 (1970)
9. 118. 9. C.A.O. Henning: Nature 227, 1129 (1970)
10. 119. 10. I.G. Higginbo, et.al.: Surf. Sci. 21, 241 (1970)
11. 120. 11. A.V. Kovda, et.al.: Thin Solid Films 20, 217 (1974)
12. 121. 12. B. Lewis: Thin Solid Films R. 7, 179 (1971)
13. 122. 13. I. Ravina, P.F. Low, Clays and Clay Minerals 20, 109 (1972)
14. 123. 14. V.I.Trofimov, et.al: Sov.Phys.Sol.State USSR 13, 512 (1971)
15. 124. 15. L. Wray, M. Prutton: Thin Solid Films 15,173-180 (1973)
16. 125. 16. M.Ackerman, J.S.Vermark, H.C.Snyman:Surf.Sci.34, 394 (1973)
17. 126. 17. I. Dumler, E. Donoso: Thin Solid Films 37, 143 (1976)
18. 127. 18. O.S. Heavens: Thin Solid Films 32, 117 (1976)
19. 128. 19. O.S. Heavens: Jap. J. Appl. Phys. 1974, 551 (1974)
20. 129. 20. R.N. Scheftal: Growth Cryst. 10, 39-52 (1976)
21. 130. 21. J. N. Orcheson: Thin Solid Films 51 395 (1978)
22. 131. 22. G.S.Zhdanov, E.A.Greiner: Kristallografia 24, 648 (1979)
23. 132. 23. G.I. Distler: Growth of Crystals 11, 44 (1979)
24. 133. 24. I.Dumler et.al: Abstr.Int.C.Thin Films, Venice, 93 (1972)
25. 134. 25. H.Sato: Film Growth, Ann.Rev.Materials Sci. 2, 217 (1972)
26. 135. 26. D.W. Pashley: A Historical Review of Epitaxy, Epitaxyal Growth, V.1. (1975)
27. 136. 27. Y.M. Gerasimov: Kristallografia 29, 1008 (1984)
28. 137. 28. J. Shirokov: Scrip. Netall 20, 1607(986)
29. 138. 29. J. Shirokoff, K.C.Hui, U.Erb: J. Physique, Colloque C5, supplément au no10, toome 49, 1988. C5-165-169

31. Á. Barna, P.B. Barna, J.F. Pócza, I. Pozsgai:
On the effect of evaporation arrangement on the morphology and structure of vacuum-deposited thin films
Thin Solid Films 5, 201-208. (1970)

1. 139. 1. L.Gaudart, P.Renucci, R.Rivoira: Phys.Rev.B 15, 3078 (1977)
2. 140. 2. J.H. Kennedy: Thin Solid Films R 43, 41 (1977)
3. 141. 3. J. Marfaing, R. Rivoira: J. Phys. Rev. B 15, 745 (1977)
4. 142. 4. L.Gaudart, P.Renucci, R.Rivoira:J.Appl.Phys.49, 4105 (1978)
5. 143. 5. L.Armand, et.al.: Thin Solid Films 59, 57 (1979)
6. 144. 6. L.Armand, J.L.Bouillot, L.Gaundart: Surf.Sci. 86, 75 (1979)
7. 145. 7. R.W.Hoffman: Solid State Phys.Program, U.S. Atomic Energy Comission Contr.No.AT 11-1-623 Techn.Rep. No.82. March 1975
8. 146. 8. Z. Kuznicki: Thin Solid Films 127, 269-82 (1985)

32. J.F. Pócza, Á. Barna, P.B. Barna:
The formation of texture in vacuum-deposited indium films
Kristall und Technik 5, 315-321. (1970)

1. 147. 1. H. Bethge: Vac. Sci.und Technol. 6, 460 (1969)
2. 148. 2. Gl.Sz.Zsdanov: Szovremennaja elektronnaja mikroszkópija iszledovanyii vesesztva Izd. Nauka, Moszkva 1982, 62.p.
3. 149. 3. Csanády Andrásné: Szilárd testek vizsgálata elektronokkal, ionokkal és röntgensugárral (Szerk.: O.Brünner, J.Heidenreich, K.M.Krebs, H.G.Schneider, Mûszaki Könyvkiadó, Bp. 1984) 239.old.
4. 150. 4. Kuo LY, Shen P: Mat.Sci.Eng. A-Struct 277 (2000) 258-265

34. Á. Barna, P.B. Barna, J.F. Pócza:
Simultaneous investigations of structure and electrical properties of vacuum-deposited thin films by "in-situ" electron microscopy
Septiéme Congrées International de Microscopie Électronique, Grenoble, p. 445-446. (1970)

1. 151. 1. A.E. Curzon: Rew. Sci. Instr. 42, 545 (1971/1)
2. 152. 2. J.A.Venables: P.5th Eur.Congr.El.Micr.Manchester, 344 (1972)
3. 153. 3. M.J. Stowell: Thin Solid Films 12, 341 (1972)
4. 154. 4. K. Takayanagi, K. Yagi, K. Kobayashi, G. Honjo: Proc. 8th Int. Congr.on El. Microscopy, Camberra, 1974 (V.I. 184)
5. 155. 5. K.Takayanagi, et.al.: J.Phys.E. 11, 411 (1978)
6. 156. 6. G.Honjo: BK 18096 R. 6, 195 (1980)
7. 157. 7. Csanády Á.: Magy. Kem. Fo. 86, 488 (1980)
8. 158. 8. G. Honjo, K. Yagi: Current Topics in Material Sci. Vol.6. 196-307 (1980). Ed.E. Kaldis
9. 159. 9. Z. Kuznicki: Thin Solid Films 127, 269 (1985)
10. 160. 10. K. Takayanagi: J. Electr. Micr. 38(S) 58. (1989)
11. 161. 11. Csanády Andrásné: Szilárd testek vizsgálata elektronokkal, ionokkal és röntgensugárral (Szerk.: O.Brünner, J.Heidenreich, K.M.Krebs, H.G.Schneider, Mûszaki Könyvkiadó, Bp. 1984) 239.old.

36. J. Peisner, P. Roboz, P.B. Barna:
Thickness dependence of the quantum yield and attenuation length of photoelectrons in thin indium films
Phys. Stat. Sol. 4, K187-191. (1971)

1. 162. 1. W. Pong, H.K. Nishihara, D. Chan: J. Optical Soc. America 62,4, 487 (1972)
2. 163. 2. Chaney JA, Pehrsson PE: Appl.Surf. Sci. 180 (2001) 214-226

37. Á. Barna, P.B. Barna, J.F. Pócza:
Grwth of crystallites in amorphous Ge thin films
V. Vac. Congr. Portoroz 1971. (Jugoslovenski Komitet za Vakuumsku Tehniku) Bilten 12, 181-188. (1972)

1. 164. 1. J.A. Venables: Proc. 5th European Congr. on El. Micr., Philadelphia, 1972 (p.344)

38. A. Dévényi, C. Rusu, M. Rusu, Á. Barna, P.B. Barna:
Electrical and structural properties of sputtered Ge and GexTe1-x films
Proc. Int. Conf. on Phys. and Chem. of Semiconductor Heterojunction and Layer Structures(Akadémiai Kiadó, Budapest) IV. p. 105-113. (1971)

1. 165. 1. R. Grigorovici: Thin Solid Films 9, 1 (1972)
2. 166. 2. V.P. Skripov: Topics in Materials Science 2, 327 (1977)

40.1 Á. Barna, P.B. Barna, J.F. Pócza, I. Pozsgai, A. Dévényi:
Thick self-supporting amorphous germanium films
Proc. Third Int. Symp. on Research Materials for Nuclear Measurements, Gatlinburg, Tennessee, USA 1971. p. 232-238.

1. 167. 1. J. Tauc, A. Ábrahám: J. Non-Cryst. Solids 4, 279 (1970)
2. 168. 2. M. Zavetova, V. Vorlicek: Phys. Stat.Sol. 48, 113 (1971)
3. 169. 3. R. Grigorovici: Thin Solid Films 9, 1 (1972)
4. 170. 4. A. H. Muggleton: J. Phys. E. 12, 780 (1979)
5. 171. 5. A. H. Muggleton: Vacuum R 37, 785 (1987)

40.2 Á.Barna, P.B.Barna, J.F.Pócza, I.Pozsgai, A.Dévényi:
Thick self-supporting amorphous germanium films
Nuclear Instruments and Methods 102, 549-552. (1972)

1. 172. 1. Meens A, Ehret G: Nuclear Instruments and Methods Phys Res A 1995;362(1):53-59
2. 173. 2. Fülöp Z. Z.Phys.A, 355, 203 (1996)

41. Á. Barna, P.B. Barna, J.F. Pócza:
Crystallization processes in a-Ge thin films
J. Non-Crystalline Solids 8-10, 36-44. (1972)

1. 174. 1. Z.Zemek, M.Zavetova, S.Koc: Proc. Int. Conf. on Amorphous Liquid Glassy Semicond., Sofia, 1972 (p.71)
2. 175. 2. J.A. Venables: Proc. 5th Eur. Congr. on El. Micr. Philapelphia, 1972 (p.344)
3. 176. 3. S.C.Moss, P.Flyn, L.O.Bauer: Phil. Mag. 27, 441 (1972)
4. 177. 4. S.C.Moss, D.Adler:Comments on Solid State Phys.5, 47 (1973)
5. 178. 5. M.L.Theye,M.Gandais,S.Tisson:Phys.Stat.Sol.a 17, 643 (1973)
6. 179. 6. M. Gandais, et.al.: Phys. State Sol. b 58, 601 (1973)
7. 180. 7. R. Grigorovici: Electronic and Structre Properties of Amorphous Semicond. Ed.: P.G.Le Comber, J. Mort; Acad. Press, London 1973 (p.191)
8. 181. 8. S. Koc: Cesk. C. Phys. A 23, 597 (1973)
9. 182. 9. W.Paul, G.A.N.Conell, R.J.Temkin: Adv.Phys. 22, 531 (1973)
10. 183. 10. F.W.Lytle, et.al: J.Non-Cryst.Sol. 13, 69 (1973-74)
11. 184. 11. M.L.Theye: Proc. 5th Int.Conf.on Amorphous and Liquid Semicond., Garmisch Partenkirchen, 1974 (V.2. p. 1193)
12. 185. 12. H. Mell: Proc. 5th Int. Conf.on Amorphous and Liquid Semicond., Garmisch Partenkirchen, 1974 (V.1. p. 203)
13. 186. 13. R. Grigorovici: Amorphous and Liquid Semiconductors, Ed.: J. Tauc, Plenum Press, London, 1974 (p.46)
14. 187. 14. D.K. Pandaya: Thesis, Delhi, 1975
15. 188. 15. M.L. Knotek: J. Vac. Sci. Techn. 12, 117 (1975)
16. 189. 16. S.Koc, M.Zavetova, J.Zemek: Czec.J.Phys. 25, 83 (1975)
17. 190. 17. J.W. Osmun: Phys. Rev. B 11, 5008 (1975)
18. 191. 18. D.K.Pandaya,A.C.Rastogi,K.L.Chopra:J.Appl.Phys.46, 2966 (1975)
19. 192. 19. D.K.Pandaya, et.al.: Phys.Stat.Sol.a 32, 489 (1975)
20. 193. 20. J.B.Webb, D.E.Brodie: Can.J.Phys. 53, 2481 (1975)
21. 194. 21. N.A.Blum, C.Feldman: J.Non-Cryst. Solids 22, 29 (1976)
22. 195. 22. P.Germain,S.Squelard,J.C.Bourgoin:B.AM Phys.S.21, 334(1976)
23. 196. 23. G.Nakhodkin, J.Shaldervan: Thin Solid Films 34, 21 (1976)
24. 197. 24. B.A.Orlowski, et.al.: Thin Solid Films 34, 31 (1976)
25. 198. 25. M.A. Paesler: Phys.Rev.B 13, 5578 (1976)
26. 199. 26. H. Suto, H.Ishikawa:T. Jap.I.MET 17, 596 (1976)
27. 200. 27. H.J. Unger: Phys.Stat.Sol.B 76, 841 (1976)
28. 201. 28. K. Weiser: Prog. Solid. 11, 403 (1976)
29. 202. 29. K.P.Chik, Pui Kong Lim: Thin Solid Films 35, 45 (1976)
30. 203. 30. P.Germain, et.al.: J. Non-Cryst. Solids 23, 93 (1977)
31. 204. 31. P. Germain, et.al.: J.Apl.Phys. 48, 1909 (1977)
32. 205. 32. K.L. Chopra, et.al.: Thin Solid Films 47, 203 (1977)
33. 206. 33. V.I.Belozert, V.M.Kosevics: IZV.AN SSSR Fiz.41, 2380 (1977)
34. 207. 34. L. Csepregi, et.al.: Solid State Comm. 21, l0l9 (1977)
35. 208. 35. A. Georghin, et.al.: Rev. Phys. Appl. 12, 721 (1977)
36. 209. 36. M.Niedzwie, L.Zdanovic: J. Non-Cryst.Solids 23, 167 (1977)
37. 210. 37. R. Wang, M.D. Mezz: Phys.Stat.Sol.a 39, 697 (1977)
38. 211. 38. U. Koster: Phys.Stat.Sol.a 48, 313 (1978)
39. 212. 39. V. Dutta: Phys.Stat.Sol.a 49, 379 (1978)
40. 213. 40. Z.L.Liau: Nuc.Instr. 149, 623 (1978)
41. 214. 41. F. Spaepen: Acta metallurgica 26, 1167 (1978)
42. 215. 42. K. Zallema, et.al.: Solid State Comm. 26, 901 (1978)
43. 216. 43. U. Koster: Adv.Coll. in Review 10, 129 (1978)
44. 217. 44. S.K. Dey, W.T.J. Fong: J.Vac.Sci. Techn. 16, 240 (1979)
45. 218. 45. A. Burian, et.al.: Acta Phys.Sol.A 55, 681 (1979)
46. 219. 46. M.A. Frich, W. Reuter: J.Vac.Sci.Techn. 16, 1020 (1979)
47. 220. 47. P. Germain, et.al.: J.Appl.Phys. 50, 6986 (1979)
48. 221. 48. S.W. Krishnaswami, et.al: J.Non-Cryst.Solids 35, 531 (1980)
49. 222. 49. S.S. Lau: in Handbook on Semiconductors, chapter 8. 531 (1980)
50. 223. 50. M. Maenpaa: Thin Solid Films 82, 347 (1981)
51. 224. 51. S. Squelard: Rev. Phys. 16, 657 (1981)
52. 225. 52. J. Gutzow: Thin Solid Films 85, 203 (1981)
53. 226. 53. K.N. Sharma: J.PA Phys. N 21, 116 (1983)
54. 227. 54. J. Magarno: J. Physique 43, 271 (1982)
55. 228. 55. M. Kaczorow: J. Mater. Sci. 17, 3145 (1982)
56. 229. 56. D. Beusahel: J. Appl. Phys. 54, 3485 (1983)
57. 230. 57. P.G. Larsson: J. Phys. E. 36, 1091 (1983)
58. 231. 58. T.M. Donovan: Thin Solid Films 116, 41 (1984)
59. 232. 59. I. Chamboul: J.Appl.Phys.Lett. 47, 117 (1985)
60. 233. 60. T. Okada: J.Phys.JPN L55, 1415 (1986)
61. 234. 61. G.P. Srovasta: J.Mater.Sci. 21, 2972 (1986)
62. 235. 62. O. Alvarez: J.Vac.Sci.A 5, 1798 (1987)
63. 236. 63. K. Maki: J.Cryst.Growth 79, 144 (1986)
64. 237. 64. H. Homma: Appl.Phys.L. 50, 594 (1987)
65. 238. 65. W. Sevenhan.. Phys. SCR 38. 426 (1988)
66. 239. 66. W. Sevenhan.. Phys. Rev.B. 38, 4974 (1988)
67. 240. 67. K.Maki: J.Appl.Phys. 63. 5747 (1988)
68. 241. 68. E.J.Cukauskas, W.L.Carter: IEEE Magnet. 25. 1235 (1989)
69. 242. 69. V.A.Shklodovski,V.M.Kuzmenko:Usp.Fiz.Nauk.157. 311 R (1989)
70. 243. 70. Tan ZQ Phys Rev B 46 9505 (1992)
71. 244. 71. T.J.Konno, R.Sinclair: MRS Spring Meeting 1993
72. 245. 72. F.Edelman: J.Appl.Phys. 72, 5153 (1992)
73. 246. 73. R.J.Zhang: J.Mater.Sci. 28, 1705 (1993)
74. 247. 74. Edelman F. Appl Surf S 70-1 727 1993
75. 248. 75. Radnóczi G. Thin Solid Films 232 68 1993
76. 249. 76. Konno T.J.: Mat Sci E A 179 (1994) 426
77. 250. 77. Czigány Zs., Radnóczi Gy.: J.Non-Cryst.S-A, 175 (1994) 228.
78. 251. 78. Konno T.J.: Phil Mag B 71 (1995) 179
79. 252. 79. Ramanath G., J.Appl.Phys. 79, 3094 (1996)
80. 253. 80. Maruyama E: Jpn JAP 1, 36, (1997) 262
81. 254. 81. M-L.Theye: Tetrahedrally bonded amorphous semiconductors, in Noncrystalline semiconductors Vol.II. (ed.: M.Pollack) (1987) 2-51.
82. 255. 82. M.Gazicki: Chaos Solitons & Fractals 10 (1999) 1983-2017
83. 256. 83. M.Gazicki, G.Janowska: Thin Solid Films 352 (1999) 6-8
84. 257. 84. Katsuki F, Hanafusa K, Yonemura M, Koyama T, Doi M: J. Appl. Phys. 89 (2001) 4643-4647
85. 258. 85. Tanaka N, Kawahara M.: Mat.Sci.Eng. A 312 (2001) 25-30

44. M. Lomniczy, Á. Barna, P.B. Barna, J.F. Pócza, I. Pozsgai:
Structural and electrical changes during the heat treatment of Au-SiOx cermet films
Thin Solid Films 13, 105-108. (1972)

1. 259. 1. B. Abeles: Advances in Materials and Devices Reserch, Ed.: R.Wolfe, Academic Press, New York, 1976 (V.6.p.l).
2. 260. 2. A.Dévényi, R.Manaila, C.Rusu: Rev.Roumane Phys. 21, 1023 (1976)
3. 261. 3. J.P. Gauthier: Phys.Stat.Sol.a 18, K 61 (1979)
4. 262. 4. C.B. Steele: Phys.stat.sol (a)-Appl.Res. 196 (1988) 515-523

47. Á. Barna, P.B. Barna, J.F. Pócza, I. Pozsgai:
Condensation and epitaxial growth of evaporated thin films on NaCl covered by an amorphous dielectric intermediate layer
Acta Physica Hungarica 33, 399-410. ((1973)

1. 263. 1. A.V. Kovda, L.L. Aksynova, G.I. Distler, Y.M. Gerasimov, E.I. Koztukova: Thin Solid Films 20, 217 (1974)
2. 264. 2. G.I. Distler: Thin Solid Films 32, 157 (1976)
3. 265. 3. R.N. Steftal: Growth Crystals 10, 58 (1976)
4. 266. 4. G.I. Distler: Izvesztyija Akademii Nauk SSSR Serija Fizicseszkaja 38, 1424 (1974)
5. 267. 5. G.I. Distler: Thin Solid Films 33, 287 (1976)
6. 268. 6. Shirokov, J.: Scrip. Metal. 20, 1607, (1986)
7. 269. 7. J.Shirokoff, K.C.Hui, U.Erb: J.de Physique Colloque C5, suppl. no10, Tome 49 C5-165-169 (1988)
8. 270. 8. Meens A, Ehret G Nuclear Instruments and Methods Phys Res A 1995; 362(1): 53-59

53. Á.Barna, P.B.Barna, Z.Bodó, J.Pócza, I.Pozsgai, G.Radnóczi:
Structure Ordering and Electrical Conduction of High Purity Amorphous Ge Films
Proc.5th Int. Conf. on Amorphous and Liquid Semiconductors, Garmisch-Partenkirchen, Vol. 1., 109-116. (1974) (Ed: J.Stucke, W.Brening, Taylor and Francais, London)

1. 271. 1. A. Beinenstock: Proc.5th It.Conf. on Amorphous and Liquid Semicond., Garmisch-Partenkirchen,1974 (V.I.p.49)
2. 272. 2. P.Thomas: Phys.Stat.Sol.b 71, 763 (1975)
3. 273. 3. W. Beyer: Phys.Stat.Sol.a 30, 511 (1975)
4. 274. 4. D.K. Pandaya: J.Appl.Phys. 46, 2966 (1975)
5. 275. 5. S.K. Barthwal: Phys.Stat.Sol.a 36, 533 (1976)
6. 276. 6. J.E. Greene: Thin Solid Films 37, 429 (1976)
7. 277. 7. M. Noda: Jap.J.Appl.Phys. 15, 557 (1976)
8. 278. 8. G. Nakhodkin: Thin Solid Films 34, 21 (1976)
9. 279. 9. A.G. Dirks: Thin Solid Films 47, 219 (1977)
10. 280. 10. H.J. Leamy: J.Phys.D. 10, 95 (1977)
11. 281. 11. I.P. Koval: Surf.Sci. 7, 40 (1978)
12. 282. 12. I.Ohdomari: Phys.Lett.A 64, 253 (1978)
13. 283. 13. P.A. Thomas: Phys.Rev.B 18, 3059 (1978)
14. 284. 14. H.S. Randhawa: J.Appl.Phys. 49, 4294 (1978)
15. 285. 15. R.Andrew: J.Appl.Phys. 50, 1142 (1979)
16. 286. 16. P.H. Gaskell: Phyl.Mag.A 39, 245 (1979)
17. 287. 17. M. Shiojiri: Jap.J.Appl.Phys. 18, 1931 (1979)
18. 288. 18. G. Nahodkin: Thin Solid Films 65, 209 (1980)
19. 289. 19. S.V. Krishnaswami: J.Non-Cryst. 35-36, 531 (1980)
20. 290. 20. P. Swab: J.Vac.Sci.Tecn. 17, 362 (1980)
21. 291. 21. H.J. Leamy BK 18096 R 6309 (1980)
22. 292. 22. M.L. Theye: J.Non-Cryst. 37, 301 (1980)
23. 293. 23. M.L. Theye: J.Physique 41, 1173 (1980)
24. 294. 24. S.V. Krishnas: Thin Solid Films 79, 21 (1981)
25. 295. 25. C. Lo: J. Appl. Phys. 53, 2745 (1982)
26. 296. 26. A.R. Long: Phyl.Mag.B 45, 497 (1982)
27. 297. 27. K. Weber: Phys. State Sol.B 110, 153 (1982)
28. 298. 28. R. Messier: J.Appl.Phys. 53 (9) 6220 (1982)
29. 299. 29. N.G. Nakhodkin: Thin Solid Films 112, 267 (1983)
30. 300. 30. R.Sonnberger: Zeitstr.für Phys.B-Condensed Matter, 56 (1984) 289-295
31. 301. 31. E.Mayer: J.Chem.Phys. 80, 2939 (1984)
32. 302. 32. T.M. Donovan: Thin Sold Films 116, 41 (1984)
33. 303. 33. M. Popescu: Thin Solid Films 121, 317 (1984)
34. 304. 34. Csanády Andrásné: Szilárd testek vizsgálata elektronokkal, ionokkal és röntgensugárral (Szerk.: O.Brünner, et al, Mûszaki Könyvkiadó, Bp. 1984), 240.
35. 305. 35. J. Stuke: Phyl.Mag.B 52, 225 (1985)
36. 306. 36. N.G. Nakhodkin: Sov.Ph.Se.R 19, 1182 (1985)
37. 307. 37. N.L. Lee: J. Mater. Res. 3, 862 (1988)
38. 308. 38. H.Overhof: Spr. Trac. M. 114, 1 R (1989)
39. 309. 39. W.Paul, S.J.Scott, J.Jones, W.A.Turner: Phyl.Mag.B 63 (1991) 247.
40. 310. 40. Nosaka H.: J.Non-Cryst. S. 200, 218 (1996)
41. 311. 41. Ligatchev V: Physica B 337(1-4): 333-345. 2003

55. Á. Barna, P.B. Barna, J.F. Pócza, I. Pozsgai, G. Radnóczi:
Electron microscopic study of the ordering and crystallization pocesses in amorphous materials
Materailü IX. Vszeszojuznoj Konf. po Elektronnoj Mikroszkopii, Tbiliszi 1973 (59-60)

1. 312. 1. N.G. Nakhodkin, A.I. Shaldervan, A.F. Bardamid: Conf. Amorphous 1974. Reinhardsbrunn,(I.201-204)

60. Á.Barna, P.B.Barna, Z.Bodó, J.Pócza, I.Pozsgai, G.Radnóczi:
Simultaneous Investigation of the Crystal Structure and Electrical Properties of Crystallized Germanium Films by UHV "in-situ" Electron Microscopy
Thin Solid Films 23, 49-62. (1974)

1. 313. 1. D.K. Pandaya: Thesis, Delhi, 1975.
2. 314. 2. J.C. Anderson: Vacuum 27, 263 (1977)
3. 315. 3. V. Dutta: Phys.Stat.Sol.a 48, 247 (1978)
4. 316. 4. S. Hasegawa: J.Non-Cryst.Solids 27, 215 (1978)
5. 317. 5. J.R. Bosnell, Active and Passve Thin Film Devices, Acad.Press, New York, 245 1978
6. 318. 6. U. Koster: Adveances in Colloid and Interface Science, Elsevier Scietific 10, 129 1978
7. 319. 7. J.W. Orton: Reports on Progess in Phys. 43, 1263 (1980)
8. 320. 8. M.L. Theye: J.Non-Cryst. 37, 301 (1980)
9. 321. 9. J.W. Orton: J.Appl.Phys. 53, 1602 (1982)
10. 322. 10. Csanády Andrásné: Szilárd testek vizsgálata elektronokkal, ionokkal és röntgensugárral (Szerk.: O.Brünner, et al, Mûszaki Könyvkiadó, Bp. 1984) 239.old.
11. 323. 11. K.C. Sharma, J.Phys. D, 25, 1019 (1992)
12. 324. 12. K.C. Sharma, J.Phys. D, 23, 1411-1419 (1990)
13. 325. 13. M-L.Theye: Tetrahedrally bonded amorphous semiconductors, in Noncrystalline semiconductors Vol.II. (ed.: M.Pollack) (1987) 2-51.

63. J.F. Pócza, Á. Barna, P.B. Barna, I. Pozsgai, G. Radnóczi:
"In-situ" electron microscopy of thin film growth
Proc.6th Int. Vacuum Congress, Kyoto (1974), Jap. Journal of Applied Physics, Supplement 2, Part 1, 525-532. (1974)

1. 326. 1. A.P.Ostronuca: Tezizü dokladov h vsesojuznoj konferencii po elektronnoj mikroskopü, Taskent, I., 277 1976
2. 327. 2. J.C. Anderson: Vacuum 27, 263-275 (1977)
3. 328. 3. D. Kaschiev: Surf.Sci. 86, 14-27 (1979)
4. 329. 4. M. Harsdorff: Thin Solid Films 85, 267 (1981)
5. 330. 5. B. Petretis: Acta Phys.Hung. 48, 315 (1980)
6. 331. 6. Csanády A.: Szilárd testek vizsgálata elektronokkal, ionokkal és röntgensugárral (Szerk.: O.Brünner, et al, Mûszaki Könyvkiadó, Bp. 1984) 239.old.
7. 332. 7. F.S. Aires, P. Melinon, et al.: J.Phys.D: Appl.Phys. 25. 309-314 (1992)
8. 333. 8. Berényi D., Gergely Gy., Giber J.: A felületkutatás helyzete hazánkban, A szilárdtestkutatás újabb eredményei hazánkban 24. kötet, (Akadémiai Kiadó, Budapest, 1992)
9. 334. 9. Wang XH, Zhang F, Zheng ZH, Li CR, Chen LZ, Wang HM, Lui XH: Materials Lett.44 (2000) 105.

67. Á. Barna, P.B. Barna, G. Radnóczi, I. Rechenberg:
Elektronenmiikroskopische "In-Situ" Unrsuchung der Amorph Kristallinen Physenumwandlung in Aufwachsenden dünnen Antimofilmen
Acta Technica Academiae Sci. Hung. 80, p. 281-291. (1975)

1. 335. 1. N. Kaiser: Kristall und Technik 12, K21 (1977)
2. 336. 2. Csanády Andrásné: Szilárd testek vizsgálata elektronokkal, ionokkal és röntgensugárral (Szerk.: O.Brünner et al, Mûszaki Könyvkiadó, Bp. 1984)
3. 337. 3. H. Müller: Phys.Stat.Sol.A 66, 199 (1980)
4. 338. 4. B. Petretis, et al: Thin Solid Films 85, 301-306. (1981)
5. 339. 5. H. Kaiser: Thin Solid Films 85, 293 (1981)
6. 340. 6. H. Müller: Phys.Stat.Sol.A 79, 249 (1982)
7. 341. 7. M. Hashimoto, K.Kambe: Thin Solid Films 94, 185-190 (1982)
8. 342. 8. O. Bostanjoglo, G.Schlotzhauer: Phys.Stat.Sol.A 68, 555-560 (1981)
9. 343. 9. M. Hashimoto: Thin Solid Films 115, 309-314 (1984)
10. 344. 10. N. Kaiser: Thin Solid Films 116, 259 (1984)
11. 345. 11. M. Hashimoto: Thin Solid Films 130, 171-180 (1985)
12. 346. 12. M. Hashimoto: Thin Solid Films 139, 61-66 (1986)
13. 347. 13. M. Hashimoto: J. of Cryst. Growth 79, 140-143 (1986)
14. 348. 14. M. Hashimoto, K.Umezava: Thin Solid Films, 167, 223-231 (1988)
15. 349. 15. M. Hashimoto, T.Nohara: Thin Solid Films, 199, 71-83 (1991)
16. 350. 16. M. Hashimoto, T.Hamano: Vacuum, 40, 445-448 (1990)
17. 351. 17. G.Fuchs, M.Treilleux, F.Santos Aries, P.Melinon, B.Vabaud, A.Houreau: Thin Solid Films, 204, 107-114 (1991)
18. 352. 18. Hoareau A, et al> Thin Solid Film 209. 161-164 (1992)
19. 353. 19. P.Jensen: Phys.Rev.B, 47, 5008 (1993)
20. 354. 20. Saida T , Hashimoto M.: Thin Solid Films 227 (1993) 138-143

74. P. Thomas, Á. Barna, P.B. Barna, G. Radnóczi:
The transport properties of an inhomogeneous model of amorphous silicon and germanium films
Physica Status Solidi (a) 30, 637-646. (1975)

1. 355. 1. A.G.Dirks, H.J.Leamy: Thin Solid Films 47, 219-233 (1977)
2. 356. 2. V.Vincent: Thin Film Photoconductor, in T.J.Coutts: Active and Passive Thin Film Devices, Acad.Press,London 1978 p.429
3. 357. 3. B.Movaghar,L.Schweitzer: J.Phys.Chem.Solid State Phys. 11, 125-135 (1978)
4. 358. 4. R.Bachus, et al: Phil. Mag. B 39, 27-37 (1980)
5. 359. 5. M.L.Theye, et al: J.Phys-Paris 41 1173-1181 (1980)
6. 360. 6. H.J. Leamy: B.K.l8o96 R 6 309 (1980)
7. 361. 7. M.L.Kozhukh: J.Phys.Cond. 5, 2351-2376 (1993)

76. Á.Barna, P.B.Barna, R.Fedorowich, G.Radnóczi, H.Sugawara:
Structural anomalies disturbin the measurement of Quantum Size effect in Bi films
Thin Solid Films 36, 1. 75-79. (1976)

1. 362. 1.P.G.Borziak, Y.A.Kulyupin: Thin Solid Films 44, 1-19 (1977)
2. 363. 2. G. Burrafato, et al: Lett.Nuov.C. 22, 467-471 (1978)
3. 364. 3. C. Pariset, V.I.Vatamanyuk: J.Physiques Lett. 39, L283-286 (1978)
4. 365. 4. K. Abdelmula, et al: Thin Solid Film 62, 273-289 (1979)
5. 366. 5. A.A. Savichi: Thin Solid Films 7p, 221 (1980)
6. 367. 6. W.D. Das, N.Jayaprakash: Vacuum 31, 199-202 (1981)
7. 368. 7. W.D.Das, N.Jayaprakash: Phys.State Sol.A 68, K159-K164 (1981)
8. 369. 8. W.D.Das, N.Jayaprakash: J.Vac.Sci.Techn. 20, 58-63 (1982)
9. 370. 9. K. Uozumi: Thin Solid Films 89, 45-48 (1982)
10. 371. 10. C. Pariset: Thin Solid Films 91, 301-319 (1982)
11. 372. 11. M. Hashimoto: Thin Solid Films 130, 171 (1985)
12. 373. 12. R. Atkinson, E.Curran: Thin Solid Films 128, 333-339 (1985)
13. 374. 13. L.M. Claessen, et al: Phys.Rev.B 33, 7947-7955 (1986)

78. Á.Barna, P.B.Barna, G.Radnóczi, H.Sugawara, P.Thomas:
A model for the development of an inhomogeneous structure of vacuum deposited amorphous germanium films
Thin Solid Films 48, 2. 163-174. (1978)

1. 375. 1. J.C. Knihts: J.Non-Cryst. Solids 35-36, 159-170 (1980)
2. 376. 2. J.C. Phillips: Comm. on Sol. State Phys. 9, 191 (1980)
3. 377. 3. G.S. Cargill: III., Research Report IBM, RC 7568 (1979); Proc.Hung.Diffr.Conf. Pécs, 1978
4. 378. 4. R. Hrach, et al: Vacuum 31, 39-50 (1981)
5. 379. 5. H.J. Leamy: BK 18096 R 6, 309 (1980)
6. 380. 6. J.C.Knights, et al:Crit.Rev.in Sol.State and Mat.Sci.9, 211-283 (1980)
7. 381. 7. S.V. Krishnaswamy, et al: J.Electr.Mat. 10, 433-433 (1981)
8. 382. 8. R. Hrach, V.Stary: Thin Solid Films 85, 285-292 (1981)
9. 383. 9. K.H. Guenther: P.Soc.Photo 346, 9-18 (1982)
10. 384. 10. W. Beyer, et al: Thin Solid Films 90, 145-152 (1982)
11. 385. 11. R. Messier, RC.Ross: J.Appl.Phys. 53, 6220-6225 (1982)
12. 386. 12. G.J. Kovács, et al: Thin Solid Films 101, 21-40 (1983)
13. 387. 13. F. Pászti, et al: J.Nucl.Mat. 119, 26-36 (1983)
14. 388. 14. J.C. Knights: J.Appl.Phys.55 5-62 (1984)
15. 389. 15. M. Popescu: Thin Solid Films 121, 317-347 (1984)
16. 390. 16. J. Geiger: Thin Solid Films 126, 1-10 (1985)
17. 391. 17. M. Köhl: Thin Solid Films 126, 11 (1985)
18. 392. 18. R. Messier, J.E.Jehoda: J.Appl.Phys. 58, 3739-3746 (1985)
19. 393. 19. N.G.Nahodkin, et al: Phys.Techn.Semicond. 19. 1918 (1985)
20. 394. 20. H.Seehase: Displays 6 21-34 (1985)
21. 395. 21. J. Geiger: Thin Solid Films 126, 1 (1985)
22. 396. 22. J. Salik: Mater.Lett. 5,54 (1986)
23. 397. 23. M-L.Theye: Tetrahedrally bonded amorphous semiconductors, in Noncrystalline semiconductors Vol.II. (ed.: M.Pollack) (1987) 2-51.
24. 398. 24. P. Meakin, et al: J.Appl. Phys. 61, 5031-5037 (1987)
25. 399. 25. P.H.Gaskell, A.Sceed: J.Non-Cryst.Sol. 106, 250-255 (1988)
26. 400. 26. B. Drevillon, C.Godet: J. Appl. Phys. 64, 145-181 (1988)
27. 401. 27. J.Jurusik, Thin Solid Films, 214, 117-122 (1992)
28. 402. 28. Skakov Y.A., , et al: Fiz.Metal.Met. 80, 98-103 (1995)

79. Á.Barna, P.B.Barna, G.Radnóczi, H.Sugawara, P.Thomas:
Some remarks on the structure and formation of thin amorpphous films
Proc. Conference on Structure and Excitations of Amorphous Solids, (Ed: G. Lucovsky, E.L. Galeener), American Insitute of Physics, New York, 1976. p. 199-203.

1. 403. 1. G.S. III.Cargill, T.Mizoguchi: J.Appl.Phys. 49, 1753 (1978)
2. 404. 2. N. Apsley: J.Phys.C. 11, 4983 (1978)
3. 405. 3. T. Mizoguchi: J.Appl.Phys. 50, 3570 (1979)
4. 406. 4. H.J. Leamy: J.Appl.Phys. 49, 3430 (1978)
5. 407. 5. W. Beyer: Solid State Comm. 29, 291 (1979)
6. 408. 6. A. Howie: J.Non-Cryst. 31, 41 (1978)
7. 409. 7. H.J.Leamy: J.Appl.Phys. 50, 2871 (1979)
8. 410. 8. P.Viskov: Thin Solid Films 62, 259 (1979)
9. 411. 9. G.S.Cargill: Interfaces and Interaction 78-2 221 (1978)
10. 412. 10. H.J. Leamy: Thin Solid Films 47, 219 (1977)
11. 413. 11. H.J. Leamy: Appl.Phys. 10, L95 (1977)
12. 414. 12. J. Nagy: Physica 86-88B, 764 (1977)
13. 415. 13. P. Viskov: J.Non-Cryst.Sol. 35-36, 409 (1980)
14. 416. 14. U. Vogetro: Phil.Mag.B 41, 127 (1980)
15. 417. 15. T. Bagi: Acta Phys.Hung. 49, 181 (1980)
16. 418. 16. H.J. Leamy: BK 18096 R 6, 309 (1980)
17. 419. 17. R. Manaila: J.de Physique, C4, Supp.10, Tome 42, 213 (1981)
18. 420. 18. R. Messier: J.Appl.Phys. 53, (9) 6220 (1982)
19. 421. 19. M. Popescu: Thin Solid Films 121, 317 (1984)
20. 422. 20. M. Popescu: J.Non-Cryst. 75(1-3), 477 (1985)
21. 423. 21. M. Popescu: J.Non-Cryst. 90. 331. (1987)
22. 424. 22. H. Overhof: Spr. Trac. M. 114, 1 R (1989)
23. 425. 23. M. Popescu: J.Non-Cryst. 137. 973. (1991)
24. 426. 24. M-L.Theye: Tetrahedrally bonded amorphous semiconductors, in Noncrystalline semiconductors Vol.II. (ed.: M.Pollack) (1987) 2-51.

82. R.Tavzes, E.Kansky, A.Banovec, A.Zalar, M.Gregoric, A.Barna, P.Barna, I.Pozsgai:
The evaluation of the technology for depositing NiCr resistive films
Thin Solid Films 36, 379-382. (1976)

1. 427. 1. N.G. Dhere: Thin Solid Films 59, 33 (1979)
2. 428. 2. T.C. Huang: Thin Solid Films 148, 207 (1987)
3. 429. 3. V.S. Dharmadh: ACS Symp.S. R 295 333 (1986)
4. 430. 4. P.Mengucci et al: Thin Solid Flms 29, 67-72 (1992)
5. 431. 5. A.Belumarian: Thin Solid Films 139 (1986) 15-24

84. Á. Barna, P.B. Barna, G. Radnóczi, G. Stark, P. Thomas:
Realization of the thermoelectric power measurements in the "in-situ" electron microscopy
Amorphous Semiconductors' 76. Proc. Int. Conference (Ed: Kósa-Somogyi) Akadémiai Kiadó, Budapest, 1976. p. 443.

1. 432. 1. A.Demcsenko: Fiz.Metall M 50, 308 (1980)

86. A.Dévényi, G.Korony, G.Livescu, R.Manaila, C.Rusu, Á.Barna, P.B.Barna:
Electrical Transport and Thermopower in Mo Amorphous Ge Films
Amorphous Semiconductors' 76. Proc. of the Int. Conf. (Ed: Kósa-Somogyi) Akadémiai Kiadó, Budapest, 1976. p. 527.

1. 433. 1. R.Grigorovici: J.Non-Cryst. 35-36, 1167 (1980)

87. Barna B. Péter, Antal Andrásné, Geszti Tamásné, Barna Árpád, Hegedûs I. András:
Electron microscopic investigation of solid phases occuring during the reduction of WO3 by H2
MFKI Közlemények (Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, Hungary) 139-156, 1976

1. 434. 1. A.B.Kiss: Acta Chim. Hung. 127, 837 (1990)

92. Á. Barna, P.B. Barna, G. Radnóczi, L. Tóth, P. Thomas:
A Comparative Study of the Structure of Evaporated and Glow Discharge Silicon
Physica Status Solidi (a) 41, 81-84. (1977)

1. 435. 1. R. Mosseri: Phys.Stat.Sol. a 52,475 (1979)
2. 436. 2. H. Fritzsche: Sol.Stat.Techn. 21/1, 55 (1978)
3. 437. 3. P.E. Carlson: J.Elchem.Soc. 126, 688 (1979)
4. 438. 4. D. Weaire: Phys.Stat.Sol. a 34, K41 (1979)
5. 439. 5. J.C. Knights: Appl. Phys. Lett. 35, 244 (1979)
6. 440. 6. J.C. Knights: J. of Non-Cryst.Sol. 35/36, 159 (1980)
7. 441. 7. D. Weaire: J. of Non-Cryst.Sol. 35/36, 495 (1980)
8. 442. 8. J.F. Graczyk: Phys.Stat.Sol. a 55, 231 (1979)
9. 443. 9. L. Kubler: Phys.Stat.Sol. b 95, 307 (1979)
10. 444. 10. D.E. Carlson: Amorphous Semicond. Topics in Applied Phys. (Ed.: M.H. Bradsky, Springer Verlag, Berlin) 36, 287 1979
11. 445. 11. G. Allieg, et al: Appl.Surf.Sci. 4, 22 (1980)
12. 446. 12. D.E. Carlson: BK 148449 Polycrystalline on Amorphous Thin Films and Devices, Mat.Sci. on Techn. Series (Ed.L.L. Kamersky, Acad.Press, New York 175 (1980)
13. 447. 13. B. Mattes:BK 148449 Polycrystalline on Amorphous Thin Films and Devices, Mat.Sci. on Techn. Series (Ed.L.L. Kamersky, Acad.Press, New York 1 (1980)
14. 448. 14. H. Fritzsche: Solar Energy Materials 3, 447 (1980)
15. 449. 15. H.K. Charles: Solar Energy R 24, 329 (1980)
16. 450. 16. A.G. Revesz: Phys.Stat.Sol.a 60, 619 (1980)
17. 451. 17. M.L. Theye: J.Non-Cryst. 37, 301 (1980)
18. 452. 18. J.C. Knights: Solar Cells. 2, 409 (1980)
19. 453. 19. M.L. Theye: J.Phys. C13, 6569 (1980)
20. 454. 20. I. Weitzel: Thin Solid Films, 75, 143 (1981)
21. 455. 21. M.G. Hack: Thin Solid Films 76, 195 (1981)
22. 456. 22. N.F.Mott: J.Phys. C 13, 5433 (1980)
23. 457. 23. U. Bonse: Phil.Mag. B 42, 449 (1980)
24. 458. 24. S.J. Fonash: CRC Critical Rev. in Sol.Stat. and Mat.Sci. R 9, 107 (1980)
25. 459. 25. J.C.Knights:CRC Crit.Rev.in Sol.State Mat.Sci.9, 211 (1980)
26. 460. 26. P.S. Peercy: Nucl. Instr. 182, 337 (1981)
27. 461. 27. W. Schulke: Phil. Mag. B 43, 451 (1981)
28. 462. 28. W. Paul: Solar Energy Materials 5,229 (1981)
29. 463. 29. G.P. Ceasar: Sol.State Communications 38, 89 (1981)
30. 464. 30. K. Tsuji: Colloque C4 Suppl.10, Tome 42, 233 (1981)J.Phys.
31. 465. 31. D.E. Carlson: Prog.Crystal Growth Charact. 4, 173 (1981)
32. 466. 32. V.H.Gordew: Inorg.Mater. 16, 1172 (1980)
33. 467. 33. J.F. Sadoc, R.Mosseri: Phil.Mag. B 45, 467-483 (1982)
34. 468. 34. F.G. Wakim, et al: J.Non-Cryst. 53, 11-17 (1982)
35. 469. 35. R. Tsu, et al: Sol.State Communications 46, 79-82 (1983)
36. 470. 36. F.G. Wakim: J.Non-Cryst. 58, 11 (1983)
37. 471. 37. J.C. Knights: in Topics in Applied Physics Vol.55: The Physics of Hydrogenated Amorphous Silicon I. Ed:J.D.Joannopoulos, G.Lucovsky (1984) pp.1-62.
38. 472. 38. S.T.Kshirsagar, J.S.Lannin: Phys.Rev.B 25 (1982) 2916-2919.
39. 473. 39. D. Adler: Semiconductors and Semimetals 21, 291-318 (1984)
40. 474. 40. T.M. Donovan: Thin Solid Films 116, 41-54 (1984)
41. 475. 41. G. Zentai, L.Pogány: Thin Solid Films 116, 251-257 (1984)
42. 476. 42. R.Messier, R.C.Ross: J.Appl.Phys. 53 (1982) 6220-6225
43. 477. 43. Knights JC: J. Appl. Phys. 55, 5 (1984)
44. 478. 44. R.Messier, J.E.Jehoda: J. Appl. Phys. 58, 3739-3746 (1985)
45. 479. 45. I.Esquivias, et al: J.Vac.Sci.Technol. A 3, 1791-96 (1985)
46. 480. 46. J.Gonzales-Hernandez, et al: P.Soc.Photo 524 126-136 (1985)
47. 481. 47. P.Danesh, et al: Appl.Phys. A 39, 297-299 (1986)
48. 482. 48. R.Roy, et al: Mater. Lett. 4, 323-328 (1986)
49. 483. 49. Ohsaki H., et al: Jpn JAP 1 25 1773-1777 (1986)
50. 484. 50. Collins R.W., Cavese JM: JAP 61, 1869-1882 (1987)
51. 485. 51. Bhide V.G. , et al: JAP 62, 108-116 (1987)
52. 486. 52. Tsu R.: Solar Cells 21, 19-24 (1987)
53. 487. 53. S. Iselborn, et al: Phys. Stat. Sol. A. 108, 275-284 (1988)
54. 488. 54. H. Overhof: Spr. Trac. M. 114, 1. R (1989)
55. 489. 55. S.R. Elliot: Adv. Physics 38, 1. R (1989)
56. 490. 56. S.Kugler, et al: Phys.Rev.B 40, 8030-8032 (1989)
57. 491. 57. H.T.Gutierrez, et al: J.Appl.Phys. 67, 7031-7033 (1990)
58. 492. 58. R.Tsu, et al: J. Non-Cryst.Sol. 114, 199-201 (1989)
59. 493. 59. V.Drchal, J.Malek: Phil.Mag.B 62, 271-287 (1990)
60. 494. 60. A.P.Sokolov, et al: Sov.Phys.Semicond. 24, 720-722 N (1990)
61. 495. 61. A.P.Sokolov, et al: J. Non-Cryst. 137, 99-102 (1991)
62. 496. 62. A.P.Sokolov, et al: J.Phys.Cond.Mat. 3, 9887-9894 (1991)
63. 497. 63. L.M.Holzman, Proc. XIIth Int. Congr. El. Micr. San Francisco, 1990, pp.142-143
64. 498. 64. Berényi D., Gergely Gy., Giber J.: A felületkutatás helyzete hazánkban, A szilárdtestkutatás újabb eredményei hazánkban 24. kötet, (Akadémiai Kiadó, Budapest, 1992)
65. 499. 65. Kugler S., et al: Phys Rev B 48 7685-7688 1993
66. 500. 66. M.S.Ashtikar, G.L.Sharma: Solid State Commun. 91 (1994) 831-834.
67. 501. 67. Takahashi H, Nagata H, Kataoka H, Takai H: J Mater Res. 10 (1995) 2736-2741
68. 502. 68. L.Pusztai: Solid State Phenomena, 44-46 (1995) 25-40
69. 503. 69. Kugler S.: Solid State Phenomena, 44-46 (1995) 559-568
70. 504. 70. K.Kohary, S.Kugler: J.Non-Cryst.Solids 266 (2000) 746-749
71. 505. 71. S.Kugler: Solid State Physics 35 (2000) 783-790.
72. 506. 72. Valladares AA, Alvarez F, Liu Z, et al. Eur.Phys.J. B 22 (2001) 443.
73. 507. 73. Alvarez F, Diaz CC, Valladares AA, Valladares RM: Phys.Rev.B 65 (11): art. no. 113108 (2002)
74. 508. 74. Varallyay Z, Kugler S: J.Non-Cryst.Solids 299. 265-268 Part A 2002
75. 509. 75. Alvarez F, Valladares AA: J.Non-Cryst.Solids 299. 259-264 Part A 2002
76. 510. 76. Kohary K, Kugler S: Mol Simulat 30 (1) 17-22 2004

93. Á. Barna, P.B. Barna, G. Stark, P. Thomas, L. Tóth:
Realization of the Thermoelectric Power Measurements in the "in-situ" Electron Microscopy Thin Films
Proc. 7th Int. Vacuum Congr. and the 3rd Int. Conf. on Solid Surfaces, V. II. 1635-38. (Ed: Dobrozemsky, F. Rüdenauer, F.P. Viehböck, A. Breth, Vienna, 1977.)

1. 511. 1. M. Popescu: J.Non-Cryst. 75, 477 (1985)
2. 512. 2. Csanády Andrásné: Szilárd testek vizsgálata elektronokkal, ionokkal és röntgensugárral (Szerk.: O.Brünner et al, Mûszaki Könyvkiadó, Bp. 1984) 239.old.

94. A. Barna, P.B. Barna, G. Radnóczi, H. Sugawara, P. Thomas:
Computer Simulation of the Post-Nucleation Growth of Thin Amorphous Ge Films
Proc. IXth Int. Conf. on Amorphous and Liquid Semiconductors, Edinborough 19. (1977)

1. 513. 1. W. Beyer: J.Appl.Phys. 53, 8745 (1982)
2. 514. 2. M. Popescu: Thin Solid Films: 121, 317 (1984)

113. Barna Á., Barna B.P., Geszti O., Pozsgai I., Radnóczi Gy., G. Kästner:
Analysis of the second phases in heat treated tungsten wires
VII. Anyagvizsgáló Kongresszus közleményei, Budapest II. 897-902. (1978)

1. 515. 1. Csanády Andrásné: Szilárd testek vizsgálata elektronokkal, ionokkal és röntgensugárral (Szerk.: O.Brünner et al, Mûszaki Könyvkiadó, Bp. 1984) 239.old.

118. Á.Barna, P.B.Barna, G.Radnóczi, F.M.Reicha, L.Tóth:
Formation of aluminium thin films in the presence of oxygen and nickel
Phys. Stat. Sol. (a) 55, 427-435. (1979)

1. 516. 1. Bengt Andersson: Structure and Morphology of Pure and Oxigen-Doped Ni-Al Films Pepared by Co-Evaporation
   Linköping Studies in Science and Technol. Dissertations, No. 75. 1982. Dep. of Phys. and Measurement Techn. Linköping Inst. of Techn,S-58183 Linköping, Sweden
2. 517. 2. J.E. Sundgren, et al: J. Vacuum Sci. A l, 301-304 (1983)
3. 518. 3. H.T. Hentzel, et al: Acta Metall. 31, 2103-2111 (1983)
4. 519. 4. C.R. Grovenor, et al: Acta Metall. 32, 773-781 (1984)
5. 520. 5. M.K. Hibbs, et al: Thin Solid Films 116, 177-189 (1984)
6. 521. 6. G.J. van der Kolk, M.J.Verkerk: J.Appl.Phys. 59, 4062-4067 (1986)
7. 522. 7. M.J. Verkerk, et al: Thin Solid Films 139, 77-88 (1986)
8. 523. 8. H. Bangert: Thin Solid Films 137, 193 (1986)
9. 524. 9. M.J. Verkerk, G.J. van der Kolk: J. Vac. Sci.Techn. A 4, 3101-3105 (1986)
10. 525. 10. G.J. van der Kolk, M.J.Verkerk, N.Brankert: Semiconductor International Part 2. 106-111 (1988)
11. 526. 11. V. Schultze: Appl. Surf. Sci. 32. 409-419 (1988)
12. 527. 12. F.M.D'Heurle, J.M.E.Harper: Thin Solid Films 171, 81-92 (1989)
13. 528. 13. T.Hashimoto, K.Okamoto, K.Hara, M.Kamiya, H.Fukivara: Thin Solid Films, 182, 197-207 (1989)
14. 529. 14. D.N.Popov, et al: Vacuum 38, 1015-1017 (1988)
15. 530. 15. W.Tice, G.Slusser: J.Vac.Sci.Technol. 3 8 106-107 (1990)
16. 531. 16. G.Hakansson: J.Vac.Sci.A 8, 3769 (1990)
17. 532. 17. M.A. el Hiti: Rev.Phys.A P 25, 775-782 (1990)
18. 533. 18. R.J.Wilson, B.L.Weiss: Thin Solid Films, 199, 291-297 (1991)
19. 534. 19. Wilson,R.J., Weiss BL.: Vacuum, 42, 987-994 (1991)
20. 535. 20. H. Savaloni, et al: Vacuum 43, 965-980 (1992)
21. 536. 21. D.V.Kononenko, et al: Scr. Met.Mat. 33 (1995) 1981-1986.
22. 537. 22. Hollars CW., Dunn RC.: Rev.Sci.Inst. 69 (1998) 1747-1752.
23. 538. 23. Savaloni H, Najmi SB: Vacuum 66 (2002) 49-58
24. 539. 24. Qui H, Wang FP, Wu P, Pan LQ, Li LY, Xiong LY, Tian Y: Thin Solid Films 414 (1) 150-153 2002

121. Á. Csanády, Á. Barna, P.B. Barna:
The direct observation and investigation of the oxidation of aluminium in the transmission electron microscope
Oxidation of Metals 13, 245-254. (1979)

1. 540. 1. K. Shinohara: Z. Metallkunde 73, 774 (1982)
2. 541. 2. D.L. Cocke: Catal. Rev. R 26 163 (1984)
3. 542. 3. H.J. vanBeek: Thin Solid Films 122, 131 (1984)
4. 543. 4. J.I.Eldridge: Oxid. Metall, 30, 301 (1988)
5. 544. 5. J.A.Ugai: Zh. Fiz. Khim. 64, 1966 (1990) N
6. 545. 6. Berényi D., Gergely Gy., Giber J.: A felületkutatás helyzete hazánkban, A szilárdtestkutatás újabb eredményei hazánkban 24. kötet, (Akadémiai Kiadó, Budapest, 1992)
7. 546. 7. Rasevszki F. Dis., RWTH Aachen, D82 1994
8. 547. 8. Olefjord J., Alum.Techn. 86, 383 1986
9. 548. 9. Ahmed M. Metal.T.A. 18 681 (1987)
10. 549. 10. Zaporina NA, Korsaks AU: Ind.Lab. 65 (1999) 442-444.

125. Z. Paál, Á. Barna, P.B. Barna, L. Tóth:
The cavitated structure of sintered platinum black; electron microscopic evidences and some catalytic properties
Materials Chemistry 6, 95-102. (1981)

1. 550. 1. A. Szász, et al: J. Non-Cryst. 57, 213-224 (1983)
2. 551. 2. I. Manninger: J. Phys. Ch.W. 132, 193 (1982) ??? Paál ??
3. 552. 3. Csanády Andrásné: Szilárd testek vizsgálata elektronokkal, ionokkal és röntgensugárral (Szerk.: O.Brünner et al, Mûszaki Könyvkiadó, Bp. 1984) 239.old.
4. 553. 4. Berényi D., Gergely Gy., Giber J.: A felületkutatás helyzete hazánkban, A szilárdtestkutatás újabb eredményei hazánkban 24. kötet, (Akadémiai Kiadó, Budapest, 1992)

127. M. Lomniczi, Á. Barna, P.B. Barna:
Effect of current trimming on the structure of Ni-Cr thin films
Acta Physica Acad. Sci. Hungaricae 49, 253. (1980)
Microscopie 38, 111-112. (1981)

1. 554. 1. G.J. van der Kolk: J. Appl Phys. 59, 4062 (1986)
2. 555. 2. M.J. Verkerk: Thin Solid films 139, 77 (1986)
3. 136. P.B. Barna, F.M. Reicha:Part 1-2.
4. 556. 1. M.A. el Hiti: Rev.Phys.A P 25, 775 (1990)

138. T. Bagi, Z. Hegedûs, E. Tóth-Kádár, I. Nagy, P.B. Barna:
Formation mechanism of amorphous Ni-P thin films
Acta Physica Hungarica 49, 181-188. (1980)

1. 557. 1. T. Schmidt: Nucl. Instrm. 199, 359 (1982)
2. 558. 2. A. Szász: J. Non-Cryst. 57, 213 (1983)
3. 559. 3. Plotnikov VS Fiz Metal M 75 131 (1993)
4. 560. 4. Szász A, Fabian DJ, Paál Z, et al.: J Non-Cryst Solids 103 (1988) 21-27.

139. P.B. Barna, Á. Barna, Z. Paál:
Surface chemica phenomena influencing the growth of thin films
Acta Physica Hungarica 49, 77-85. (1980)

1. 561. 1. K.H. Guenther: P. Soc. Photo (Rev.) 401, 31 (1983)
2. 562. 2. K.H. Guenther: Appl. Optics R. 23, 3612 (1984)
3. 563. 3. P. Didenko: Acta Phys. Hung., 57, 73 (1985)
4. 564. 4. Verkerk MJ, Brankaert WAMC: Thin Solid Films 139 (1986) 77-88.
5. 565. 5. Van der Kolk GJ, Verkerk MJ: J Appl Phys 59 (1986) 4062-4067.

142. F.M. Reicha, P.B. Barna:
Growth hillocks and whiskers in as deposited Al films
Thin Solid Films 85, 317. (1981) Absztr.

1. 566. 1. L.Succo: J. Vac. Sci. A. 7, 814. (1989)
2. 567. 2. K.H.Guenther: Opt.Eng. 32, 547 (1993)
3. 568. 3. K.H.Günther: Appl Optics 23: (1984) 3612-3632.
4. 569. 4. K.H.Günther: P Soc Photo-Opt Inst 401 (1983) 31-54.

144. F.M. Reicha, P.B. Barna:
On the mechanism of hillocks formation in vapour deposited thin films
Acta Physica Hungarica 49, 237-251. (1980)

1. 570. 1. K.H. Guenther: P. Soc. Photo 346, 9 (1982)
2. 571. 2. Z. Paál: Appl. Surf. Sci. 14, 101 (1982)
3. 572. 3. K. H. Guenther: P. Soc. Phot (Rev) 401, 31 (1983)
4. 573. 4. J.D. Reiiner: J. Vac. Sci. A M 2, 242 (1984)
5. 574. 5. S. Roberts: Thin Solid Films 135, 137-148 (1986)
6. 575. 6. G.J. van der Kolk: J. Appl. Phys, 59, 4062 (1986)
7. 576. 7. M.J. Verkerk: Thin Solid Films 139, 77 (1986)
8. 577. 8. M.J. Verkerk: J. Vac. Sci A 4 3101 (1986)
9. 578. 9. R.Riesenberg: Vacuum 37, 183. (1987)
10. 579. 10. M.F.Doerner: CRC C R SO 14, 25 R (1988)
11. 580. 11. M.A. el Hiti: Rev.Phys.Ap. 25, 775 (1990)
12. 581. 12. K.H.Guenther: Opt.Eng. 32, 547 (1993)
13. 582. 13. Kylner C.: Thin Solid Films 37 (1997) 169
14. 583. 14. Chang CY, Vook RW: J.Vac.Sci.Technol A 9 (1991) 559-562.
15. 584. 15. K.H.Günther: Appl Optics 23: (1984) 3806-3816.
16. 585. 16. K.H.Günther: Appl Optics 23: (1984) 3612-3632.
17. 586. 17. Kim DK, Nix WD, Vinci RP, Deal MD, Plummer JD: J. Appl. Phys. 90 (2001) 781-788

149. P.B. Barna, L. Malicskó:
Az elektronmikroszkópos anyagvizsgálat szerepe a szilárdtestkutatásban, az anyagtudományban és az ipari gyakorlatban
The application of electron microscopy in materials science, solid state and industry (in Hungarian)
Magyar Tudomány 57-64 (1980)

1. 587. 1. Berényi D., Gergely Gy., Giber J.: A felületkutatás helyzete hazánkban, A szilárdtestkutatás újabb eredményei hazánkban 24. kötet, (Akadémiai Kiadó, Budapest, 1992)

150. P.B.Barna, Z.Bodó, G.Gergely, D.Szigethy, J.Ádám, P.Jakab:
Electronmicroscopic and ellipsometric studies on oxidozed aluminium layers
Vacuum 33, 93-97. (1983)

1. 588. 1. K.H. Guenther: Appl. Optics 23, 3896 (1984)
2. 589. 2. G.F. Pastore: Thin Solid Films 123, 9 (1985)
3. 590. 3. Higo M.: Langmuir 13 (1997) 6176
4. 591. 4. Inturi RB, Szklarska-Smialowska Z: Corros.Sci 34 (1993) 1201

153. P.B. Barna, F.M. Reicha, L. Gosztola, F. Koltai:
Effects of codespositing oxygen on the growth morphology of (111) and (100) Al single crystal faces in thin films
Vacuum 33, 25-30 (1983)

1. 592. 1. G.F. Pastore: Thin Sol. Films 123, 9 (1985)
2. 593. 2. M. Verkerk: Thin Solid Films 139, 77 (1986)
3. 594. 3. G.J. van der Kolk: JAP 59, 4062 (1986)
4. 595. 4. M.J. Verkerk: J.Vac.Sci. A 4 3101 (1986)
5. 596. 5. M.J. Verkerk: J.Mat.Sci. L 6 115 (1987)
6. 597. 6. G.J. van der Kolk, M.J.Verkerk, N.Brankert: Semiconductor International Part 2. 106-111 (1988)
7. 598. 7. F.M.D'Heurle, J.M.Harper: Thin Solid Films, 171, 81 (1989)
8. 599. 8. K.Funk, M.A.Busek, T.Müller: BALZERS Berichte, (1989)
9. 600. 9. M.A.Angadi: Appl. Phys. A 51, 446 (1990)
10. 601. 10. M.A. el Hiti: Rev.Phys.A P 25, 775 (1990)
11. 602. 11. Durr W. Stahl Eisen 113 79 1993
12. 603. 12. Lee M. J Jpn Metal 57 686 1993
13. 604. 13. Inturi RB. Corros Sci 34 1201 1993
14. 605. 14. Hinode K. J.Vac.Sci.A 14 (1996) 2570
15. 606. 15. Higo M.: Langmuir 13 (1997) 6176
16. 607. 16. Hollars C.W.: Rev.Sci.Inst. 69 (1998) 1747.
17. 608. 17. K.H.Günther: Appl Optics 23: (1984) 3806-3816
18. 609. 18. Saka H, Suzuki Y, Fujino S, Haruta K, Takatsuji H, Tsujimoto K, Tsuji S: Phil. Mag. A 81 (2001) 275-285

158. Á. Barna, P.B. Barna, L. Tóth, Z. Paál, P. Tétényi:
Study of morphology and composition of Pt-black catalysts
I. Analitical electron microscopy of Pt-black
Appl. of Surf. Sci., 14, 85-100. (1982-83)

1. 610. 1. I. Manninger: Z. Phys. Ch-W 132, 193 (1983)
2. 611. 2. R. Cavanagh, et al: J. Chem.Phys. 8o, 3478-3484 (1984)
3. 612. 3. J. Manninger: J. Catalysis M 89, 164-167 (1984)
4. 613. 4. D. Farin et al: Langmuir 1985, 1 339-407
5. 614. 5. R.A. Bowling: Anal. Chem., R 57, R 130, (1985)
6. 615. 6. Szász A, Kojnok J.: Appl.Surf.Sci. 24/1, 34-56 (1985)
7. 616. 7. R.R. Petukhov, B.I.Podlovchenko, A.M.Gaskov: Sov. Electrochem. 21, 1339-1343 (1985)
8. 617. 8. Kövér L.: Surf.Int.An M 9, 251 (1986)
9. 618. 9. Sárkány J., M.Bartók: Acta Chim. Hung. 122, 285-295 (1986)
10. 619. 10. L.Schafer, H.W.Wassmuth: Surf. Sci. 208, 55-70 (1989)
11. 620. 11. R.Lamber,N.Jaeger, G.SCHulzekloff : Chem. Ing. Techn. 63, 681-691 R (1991)
12. 621. 12. Berényi D., Gergely Gy., Giber J.: A felületkutatás helyzete hazánkban, A szilárdtestkutatás újabb eredményei hazánkban 24. kötet, (Akadémiai Kiadó, Budapest, 1992)

161. P.B. Barna:
Impurity effects in the structural development of vacuum deposited thin films
Proc. 9th Int. Vac. Congr., Madrid pp. 382-396. (1983)

1. 622. 1. H. Jacobs: Surf.Sci 160, 217 (1985)
2. 623. 2. I. Esquivia: J. Vac. Sci.A 3, 1791 (1985)
3. 624. 3. G.K. Wehner: J.Vac.Sci. A 3, 1821 (1985)
4. 625. 4. G.J. van der Kolk: J.Appl Phys. 59, 4062 (1986)
5. 626. 5. M.J. Verkerk: Thin Solid Films 139, 77 (1986)
6. 627. 6. J.L.Martinez: Phys.Rev.B. 35, 9481 (1987)
7. 628. 7. N.G. Dhere: J.Vac.Sci.A 5 1936 (1987)
8. 629. 8. J. Halbritt: Appl.Phys. A R 43 1 (1987)
9. 630. 9. K. Hara, et al: J. Magn. Magn. 73. 161-166 (1988)
10. 631. 10. G. Holbom: J. Elchem. Soc. 135. 2720 (1988)
11. 632. 11. G. Carter: Scan. Micros. R. 2. 1293 (1988)
12. 633. 12. G. Carter: Vacuum 38. 479 (1988)
13. 634. 13. T.Hashimoto, K.Okamoto, K.Hara, M.Kaiya, H.Fujiwara: Thin Solid Films, 182, 197 (1989)
14. 635. 14. M.Hashimoto: Thin Solid Films, 169, 289 (1989)
15. 636. 15. K. Hara: J. Magn. Mag. 92, 68 (1990)
16. 637. 16. Radnóczi,G. 1984. 8th European Congress on Electron Microscopy, Budapest: 1229.
17. 638. 17. Berényi D., Gergely Gy., Giber J.: A felületkutatás helyzete hazánkban, A szilárdtestkutatás újabb eredményei hazánkban 24. kötet, (Akadémiai Kiadó, Budapest, 1992)
18. 639. 18. K. Itoh: J Magn Magn, 134 (1994) 199.
19. 640. 19. A.Csanády: Surf. Int. Anal., 21 (1994) 546
20. 641. 20. Fornander H.: J.Cryst.Growth 186 (1998) 189.
21. 642. 21. N.Popovic, Z.Bogdanov et al.: Thin Solid Films 244 (1999) 133-145.

162. P.B.Barna, R.Manaila, C.Rusu, E.Candet, D.Macovei, P.Pausescu, G.Radnóczi, R.Grigorovici, A.Dévényi:
Local structure and electrical properties in metalmodified amorphous Ge films
Proc. of the 10th International Conference on Amorphous and Liquid Semiconductors Tokyo, Japan (1983) (Ed: by K.Tanaka T.Shimizu J. Non-Crystalline Solids 59/60, 157-160. (1983)

1. 643. 1. J.L.Crowley: Solar Cells R 13, 319 (1985)
2. 644. 2. H.L.Meyerheim : Phys.Rev.B 41, 5871 (1990)
3. 645. 3. H.L.Meyerheim, et al: Surf.Sci. 211 (1989) 641-650.

168. G.Radnóczi, P.B.Barna
The growth of Al2Au crystallites on (111) Al films
Thin Solid Films 116, 143-149 (1984)

1. 646. 1. K.Jacobi, P.Althainz: Surf. Sci. 211-212, 456-462 (1989)
2. 647. 2. Berényi D., Gergely Gy., Giber J.: A felületkutatás helyzete hazánkban, A szilárdtestkutatás újabb eredményei hazánkban 24. kötet, (Akadémiai Kiadó, Budapest, 1992)

172. P.B.Barna, Z.Bodó, G.Gergely, P.Croce, J.Ádám, P.Jakab:
Ellipsometric and X-ray specular reflection studies on naturally grown overlayers on aluminium thin films
Thin Solid Films 120, 249-256. (1984)

1. 648. 1. G. Jingk: Phys.Stat.Sol B 139, 627 (1987)
2. 649. 2. V. Schultze: Appl. Surf. S. 32. 409 (1988)
3. 650. 3. R.B.Thurman: Adv. Appl. Mi. R 33, 75 (1988)
4. 651. 4. D.N.Popov: Vacuum 38, 1015 (1988)
5. 652. 5. A.C.Miller: J. Vac. Sci. A, 9, 1461 (1991)
6. 653. 6. V. Schultze: Appl. Phys. A, 53. 241 (1991)
7. 654. 7. C.E. Miller, Ber.Bun.Ges. 96, 869 (1992)
8. 655. 8. C.F. Lin, J.Elchem.Soc. 141 (1994) 96
9. 656. 9. T.Gesang, Hoper R, Dieckhoff S, etc: Appl. Surf. C S 84 (1995) 273
10. 657. 10. Gesang T, Hoper R, Dieckhoff S, Schlett V, Possart W, Hennemann OD: Thin Solid Films 264 (1995) 194-204
11. 658. 11. Gesang T, Hoper R, Dieckhoff S, Hartwig A, Possart W, Hennemann OD: Fresenius J Anal Chem 353(1995) 419-426
12. 659. 12. Gesang T, Fanter D, Hoper R, Possart W, Hennemann OD: Surf Interface Anal 23(1995):797-808
13. 660. 13. Gesang T: Langmuir 12, 3341 (1996)
14. 661. 14. Campos J.: Meas Sci T 9. (1998) 256.
15. 662. 15. Lee CH.: J.Appl.Cryst. 31 (1998) 181.
16. 663. 16. Schneider B, Hennemann OD, Possart W: J.Adhesion 78 (9) 779-797 2002

175. H.Bangert, A.Kaminitsek, A.Wagendristel, Á.Barna, P.B.Barna, G.Radnóczi
Ultramicrohardness measurements on Al-films evaporated under various conditions
Thin Solid Films 137, 193-198 (1986)

1. 664. 1. A.G.Dirks, P.E.Wierenga, J.J.van den Broek: Thin Solid Films 172, 51-60 (1989)
2. 665. 2. D.N.Popov, et al: Vacuum 38, 1015-1017 (1988)
3. 666. 3. J.S.Field: Surf. Coat. 36, 817-827 (1988)
4. 667. 4. W.D.Nix: Metall T-A 20, 2217-2245 (1989)
5. 668. 5. R.J.Wilson, B.L.Weiss: Vacuum 42, 719-729 R (1991)
6. 669. 6. I.Manika, J.Maniks: Thin Solid Films 208, 223-227 (1992)

181. P.B.Barna, U.Richter, Á.Barna, Z Paál, H.Zimmer:
Dispersity and crystal shape changes of Pt-black catalysts under various treatments
Proc. 8th European Congress on Electron Microscopy (Ed.: Á.Csanády, P.Röhlich, D.Szabó), Budapest, 1984. p. 1171.

1. 670. 1. Berényi D., Gergely Gy., Giber J.: A felületkutatás helyzete hazánkban, A szilárdtestkutatás újabb eredményei hazánkban 24. kötet, (Akadémiai Kiadó, Budapest, 1992)

183. Á. Barna, P.B. Barna, G. Radnóczi, G. Sáfrán:
In situ UHV study of the two-dimensional growth of Al2Au phase on Al (111) surface
Ultramicroscopy 15, (1984) 101-107.

1. 671. 1. Raschewski F. D 82 (Diss RWTH Aachen) Jülich 3019 (1994)

186. G. Radnóczi, P.B. Barna:
Interaction of dislocations and grain boundaries in Al films
Journal de Physique 46. C4-429-433 (1985)

1. 672. 1. R. Hergt, et al: Phys.Stat.Sol. A 98, 69-80 (1986)

195. P.B. Barna, Z. Bodó, G. Gergely, J. Ádám:
Spectral ellipsometric TEM and electron spectroscopic investigations on oxidized aluminium thin films
Vacuum 36. 465-469. (1986)

1. 673. 1. C.E. Miller, Ber.Bun.Ges. 96, 869 (1992)
2. 674. 2. A.Csanády: Surf. Int. Anal., 21 (1994) 546

202. P.B. Barna, L. Gosztola, A. Zalar, M. Rasigni:
Direct TEM study of the roughening of SiO2/Si interface induced during AES depth profiling
Surf. and Interface Anal., 9. 328 (1986)

1. 675. 1. Berényi D., Gergely Gy., Giber J.: A felületkutatás helyzete hazánkban, A szilárdtestkutatás újabb eredményei hazánkban 24. kötet, (Akadémiai Kiadó, Budapest, 1992)

205. M. El Hiti, P. B. Barna, F. M. Reicha:
Structure and growth morphology of SiOx films deposited on NaCl (001) faces
Vacuum 37. 97-99 (1987)

1. 676. 1. J. L. Robins: Appl. Surf. Sci. 33/34. 379-394 (1988)

206. L.Kövér, J.Tóth, J.B.Schág, J.Borbély-Kiss, P.B.Barna, I.Pozsgai, F.Medve:
Surface Analysis of Air Pollutants Collected in Populated Areas
Vacuum 37 (1987) 175-177

1. 677. 1. Thieme M. J.Nucl.Mat. 189. 303 (1992)

209. E.Kótai, F.Pászti, R.Manuaba, G.Mezey, J.Gyulai, Á.Barna, P.B.Barna, G.Radnóczi:
Damage structure induced by high-dose helium implantation into single crystal silicon
Nuclear Instruments and Methods in Physics Research B19/20 (1987) pp 312-316

1. 678. 1. Fukushima K., Yamada I: Nucl.Instr.Meth.B 112, 116-119 (1996)
2. 679. 2. Fukushima K., Yamada I: Jpn J.Appl.Phys.1, 35 (1996) 5790-5795
3. 680. 3. Vyatkin AF, Buravlev AV, Zuev AP: Nucl.Instr.Meth.B 59 (1991) 431-433
4. 681. 4. Buravlyov AV, Vyatkin AF, Egorov VK, et al: Nucl.Instr. Meth.B 55 (1991) 642-646.
5. 682. 5. Freik DM, Salii YP, Freik AD, et al: Pisma ZH Tekh.Fiz.+ 15 (1989) 49-53.

212. R.Manaila, A.Dévényi, P.B.Barna, G.Radnóczi, R.Grigorovichi
Growth mechanism in amorphous films: A computer simulation
J. Non Crystalline Solids 90, 307-313. 1987

1. 683. 1. J. Jurusik, Thin Solid Films, 214, 117 (1992)

213. A.Csanády, K.Urban, J.Mayer, P.B.Barna
Crystalline and quasicrystalline phases formed by interdiffusion in evaporated Al-Mn thin films
J.Vacuum Sci. and Techn. A 5, 1733 (1987)

1. 684. 1. S.R.Nishitani: Formation and growth mechanism of quasicrystals, Disszertáció, 1988. Kyoto 19.old.
2. 685. 2. L.Schultz: Phyl.Mag.B 61, 453 (1990)
3. 686. 3. Debakker JM Scr.Met.Mat. 27. 1205 (1992)
4. 687. 4. Schultz L. T.Appl.Phys. 72 (1994) 69 R
5. 688. 5. G.Zsigmond: Thin Solid Films 271 (1995) 26-34
6. 689. 6. Gyulai J.: J.on Communications XLIV, (1993) 36-40
7. 690. 7. Schultz L., Eckert J. in Glassy Metals III. Mechanically Alloyed Glassy Metals, Springer Verlag (1994) p.69.
8. 691. 8. G.A.Fischer, M.L.Rudee: J.Magn.Magn.Mat. 213 (2000) 335-339.
9. 692. 9. Grenet T, Giroud F, Loubet C, et al.: Mat.Sci.Eng A-Struct 294 (2000) 838-841 Sp. Iss. SI
10. 693. 10. Grenet T, Giroud F, Joulaud JL, Capitan M: Philos Mag A 82 (16) 2909-2922 (2002)

223. P.B.Barna, G.Radnóczi, Á.Csanády, K.Urban
Nucleation and growth of oriented quasicrystals with icosahedral phase on (111) and (001) faces of Al crystals at high temperature vapour deposition of thin films
Scripta Metal. 22. 373-378 (1988)

1. 694. 1. J.Eckert: Appl. Phys. Lett. 88, 117 (1989)
2. 695. 2. J.Eckert: Europhys.Lett. 13, 349 (1990)
3. 696. 3. J.Eckert: Acta Met. Mat. 39, 1497 (1991)
4. 697. 4. Chatterjee A. J.Mat.Sci. L 11 518 (1992)
5. 698. 5. M. Roy: J. Mat. Sci. L. 11, 858 (1992)
6. 699. 6. Berényi D., Gergely Gy., Giber J.: A felületkutatás helyzete hazánkban, A szilárdtestkutatás újabb eredményei hazánkban 24. kötet, (Akadémiai Kiadó, Budapest, 1992)
7. 700. 7. Schultz L. T.Appl.Phys. 72 (1994) 69 R
8. 701. 8. G.Zsigmond: Thin Solid Films 271 (1995) 26-34
9. 702. 9. Schultz L., Eckert J. in Glassy Metals III. Mechanically Alloyed Glassy Metals, Springer Verlag (1994) p.69.
10. 703. 10. Rasevszki Dis. Aachen
11. 704. 11. Wen X,.Y. Surf Coat 66 389 (1994)
12. 705. 12. Scardi P, Dong YH, Tosi C: J.Vac.Sci.& Techn. A 19 (2001) 2394-2399.
13. 706. 13. Yadav TP, Mukhopadhdyay NK, Tiwari RS, Srivastava ON: T Indian Metals 56 (6): 577-581 2003

224. A. Csanády, P.B. Barna, J. Mayer, K. Urban:
Icosahedral phase formation in vacuum deposited thin films
Materials Sci. Forum, 22-24. 617-626. (1987)

1. 707. 1. Nissen H.U.: Phil. Mag. B. 57. 587. (1988)
2. 708. 2. Kazuhiro Mihama: Thin Solid Films 163, 61-66 (1988)
3. 709. 3. M.Noro, N.Tanaka, K.Mihama: J.Crystal Growth 99, 597 (1990)
4. 710. 4. G.Zsigmond: Thin Solid Films 271 (1995) 26-34
5. 711. 5. Robertson H. Phys Rev Lett 60 2062 (1988)
6. 712. 6. Eckert J. Appl Phys Leet 55 117 (1989)
7. 713. 7. Godinho MJ. Non-Cryst 117 808 (1990)
8. 714. 8. He Y. Phyl Mag Lett 63 211 (1991)
9. 715. 9. Schultz L., Eckert J. in Glassy Metals III. Mechanically Alloyed Glassy Metals, Springer Verlag (1994) p.69.

225. A. Csanády, P.B. Barna, J. Mayer, K. Urban:
Preparation of aluminium based icosahedral thin films by high-temperature vapour deposition
Scripta Metal. 21, 1535-1540 (1987)

1. 716. 1. S.R.Nishitani: Formation and growth mechanism of qusicrystals, Disszertáció, 1988. Kyoto 19.old.
2. 717. 2. J.Reyes-Gasga: J.Vac.Sci.Technol.A 8 3455-3459 (1990)
3. 718. 3. J.Reyes-Gasga: Thin Solid Films, 196, L5-10 (1991)
4. 719. 4. S.Ranganathan, K.C.Hattopadhyay: Am.Rev.Mat.Sci.21,437 (1991)
5. 720. 5. Chatterjee A. J.Mat.Sci. L 11 518 (1992)
6. 721. 6. B.Bokhonov: J.Non-Cryst.Solids, 153, 606 (1993)
7. 722. 7. J.C.Plenet: Phys.Rev.B 47, 3021 (1993)
8. 723. 8. Tsai AP. Phil Mag L 67 393 1993
9. 724. 9. Kelton K.F. Int.Mater.R. 38 (1993) 105 R
10. 725. 10. Schultz L. T.Appl.Phys. 72 (1994) 69 R
11. 726. 11. A. Singh: Mat Sci E B 32 (1995) 137.
12. 727. 12. Schultz L., Eckert J. in Glassy Metals III. Mechanically Alloyed Glassy Metals, Springer Verlag (1994) p.69.
13. 728. 13. Eisenhammer T.: Phys Rev Lett 78 (1997) 262
14. 729. 14. Yacaman M.Y. in J.Reyes-Gasga et al Relationships of the.... World Scientific 1990
15. 730. 15. Gyulai J. J.on Communications XLIV 30-46 (1993)
16. 731. 16. Emeric E.: Phil.Mag,L. 78 (1998) 79.
17. 732. 17. Copola J, Audebert F, Duhalde S: Mat.Sci.Forum 403. 27-32 2002
18. 733. 18. Kanjilal A, Tiwari U, Chatterjee R: Mater.Res.Bull. 37(2) 343-351 2002
19. 734. 19. Grenet T, Giroud F, Joulaud JL, Capitan M: Philos Mag A 82 (16) 2909-2922 (2002)

227. P.B. Barna, G. Radnóczi, F.M. Reicha:
Surface growth topography of grain boundaries in Al thin films
Vacuum 38. 527-532 (1988)

1. 735. 1. R.J.Wilson: Thin Solid Films 198, 331 (1991)
2. 736. 2. C.Y.Chang, R.W.Vook: J.Vac.Sci.Technol.A, 9, 559-562 (1991)
3. 737. 3. Voutsas A.T., et al: J.Vac.Sci.A 16 (1998) 2668-2677.
4. 738. 4. R.J.Wilson, B.L.Weiss: Thin Solid Films 199, 291-297 (1991)

232. Á.Barna, P.B.Barna, A.Zalar
Ion beam induced roughness and its effect in AES depth profiling of multilayer NiCr thin films
Surf. and Interf. Anal. 12, 144-150 (1988)

1. 739. 1. O.Becker, O.Anderson, H.Bach: Beitr.Elektronenmikroskop.
2. 740. Direktabb. Oberfl. 22, 341-349 (1989)
3. 741. 2. C.P.Hunt, M.P.Seah: Surf.and Interface Anal.15, 254 (1990)
4. 742. 3. W.Pamler: Nucl.Instr. B 51, 34 (1990)
5. 743. 4. N.H.Turner: Analyt.Chem. 62, R113 (1990)
6. 744. 5. D.Marton: Thin Solid Films 185, 79 (1990)
7. 745. 6. R. Mattheis: Thin Solid Films 188, 335 (1990)
8. 746. 7. W.Pamler: Surf. Interf. Anal. 15. 621 (1990)
9. 747. 8. S.Hofmann: J. Vac. Sci. A, 9, 1466 (1991)
10. 748. 9. S.Hofmann: Progr. in Surf. Sci. 36, 35 R (1991)
11. 749. 10. Pamler,W. Surf. Int. An. 18, 52 (1992)
12. 750. 11. Berényi D., Gergely Gy., Giber J.: A felületkutatás helyzete hazánkban, A szilárdtestkutatás újabb eredményei hazánkban 24. kötet, (Akadémiai Kiadó, Budapest, 1992)
13. 751. 12. S.Hofmann: Appl.Surf.Sci. 70-1 9 (1993)
14. 752. 13. Gergely G: Vacuum 43 (1992) 597-599
15. 753. 14. Becker O. Ultramicroscopy 52 73 1993
16. 754. 15. Wohner T, Ecke G, Rossler H, Hofmann S: Fresenius J Anal Chem 353(1995) 447-449
17. 755. 16. Liday J, Kliment V, Vogrincic P, Tomek S: Vacuum 1995;46(1):53-55
18. 756. 17. Procop M.: Fresenius J Anal Chem 353(1995) 647
19. 757. 18. Bradley RM Phys Rev E 54 (1996) 6149
20. 758. 19. Müller C.: Thin Solid Films, 310 (1997) 81.
21. 759. 20. Wohner T.: Surf.Int.An. 26 (1998) 1.
22. 760. 21. Kim J.: Surf.Int.An. 26 (1998) 224.
23. 761. 22. Bracconi P., Niborg L.: Appl.Surf.S. 133 (1998) 129.
24. 762. 23. I.Bertóti, A.Tóth, M.Menyhárd: in Handbook of Surface and Interface Analysis, Methods for Problem-Solving (Ed. J.C.Riviere, S.Myhra, Marcel Dekker, Inc., New York1998) pp. 297-346.
25. 763. 24. Hofmann S.: Rep.Pr.Phys. 61 (1998) 827 R
26. 764. 25. K.T.Moore, J.M.Howe, A.A.Csontos: Ultramicroscopy 76 (1999) 195-202
27. 765. 26. A.Stecker, .. J.Electron Microscopy 48 (1999) 235-244.
28. 766. 27. Kajiwara K: Surf Interface Anal 22 (1994) 22-26.
29. 767. 28. Giannuzzi LA, Prenitzer BI, McKinley JM, Stevie FA: Proc. Inst. Phys.Conf. Ser. (165) (2000) 353-354
30. 768. 30. Paszti Z, Peto G, Horvath ZE, Geszti O, Karacs A, Guczi L: Appl.Phys.A 76 (4): 577-587 2003
31. 769. 31. Prenitzer BI, Urbanik-Shannon CA, Giannuzzi LA, Brown SR, Irwin RB, Shofner TL, Stevie FA: Microsc Microanal 9 (3) 216-236 2003

241. A.Csanády, J.F.Günter, P.B.Barna, J.Mayer
Intermetallic phase formation in Al and Fe thin film system
Thin Solid Films 167, 203-215 (1988)

1. 770. 1. E.G.Colgan: Mat.Sci.Reports, 5/1 (1990)
2. 771. 2. J.L.Alexandrov: Appl.Phys.A 56, 113 (1993)
3. 772. 3. Pretorius R. Mat Sci E R 10 1 1993R
4. 773. 4. C.A. Grant: Chem Mater 6 (1994) 1067
5. 774. 5. G.Zsigmond: Thin Solid Films 271 (1995) 26-34
6. 775. 6. Traverse A.: J.Phys.Cond. 8, 3843 (1996)
7. 776. 7. Meyer M.: Hyper Inter 83 (1994) 327
8. 777. 8. Theron CC. Mater Ch Ph 46 (1996) 238
9. 778. 9. Gielman T.: Appl.Surf.Sci 110 (1997) 570
10. 779. 10. Joulaud J.L.: Phil Mag A 75 (1997) 1287
11. 780. 11. Gyulai J. J.on Communications XLIV 30-46 (1993)
12. 781. 12. Raschewski F. D 82 (Diss RWTH Aachen) Jülich 3019 (1994)
13. 782. 13. Carbucicchio M.: Phil.Mag.B 76 (1997) 425
14. 783. 14. Shen TC.: Phys.Rev.L. 78 (1997) 1271
15. 784. 15. M.Carbucicchio, C.Grazzi, M.Rateo, G.Ruggiero, G.Turilli: Nanostructured Materials 11 (1999) 775-782.
16. 785. 16. Grenet T, Giroud F, Loubet C, et al.: Mat.Sci.Eng A-Struct 294 (2000) 838-841 Sp. Iss. SI
17. 786. 17. Checchetto R, Tosello C, Miotello A, Principi G: J. Phys.-Cond. Matter 13 (2001) 811-821
18. 787. 18. Bhattacharya P, Ishihara KN, Chattopadhyay K: Mat. Sci. Eng. A 304 (2001) 250-254, Sp. Iss.
19. 788. 19. Grenet T, Giroud F, Joulaud JL, Capitan M: Philos Mag A 82 (16) 2909-2922 (2002)

246. Barna,Á., Barna,P.B., Zalar,A.
Analysis of the development of large area surface topography during ion etching.
Vacuum 40: 115. (1990)

1. 789. 1. Hauffe,W: J.Appl.Phys. 64. 305, R (1991)
2. 790. 2. Tanovic N, Nucl. Instr. B 67, 590 (1992)
3. 791. 3. Antos L. Nucl. Instr. B 71, 339 (1992)
4. 792. 4. Schaublin R. Radiat Eff 126 185 1993
5. 793. 5. JY.Yao, GA.Edwards, MJ.Couper, et al.: Mater Sci Forum 189 (195) 315-320
6. 794. 6. M.R.Marks, Qin Wei, Wang Jiaji, Chen Yi: Microelectron. Reliab., 35, (1995) 807-815
7. 795. 7. Cutard T.: Mat.Sci.E A 209, 218 (1996)
8. 796. 8. Schaublin R. Phil.Mag.A 74 (1996) 593
9. 797. 9. I.Müllerova: Proc.Multinat.Congr.El.Micr. Portoroz(1997) 297
10. 798. 10. Chaleix L.: Surf Coat 91 (1997) 74
11. 799. 11. C.Verdon, Karini A., Martin J.L.: Mat.Sci.E A 246 (1998) 11.
12. 800. 12. K.T.Moore, J.M.Howe, A.A.Csontos: Ultramicroscopy 76 (1999) 195-202
13. 801. 13. A.Stecker, .. J.Electron Microscopy 48 (1999) 235-244.
14. 802. 14. M.Utriainen, H.Lattu, H.Viirola, L.Niisto, R.Resch, G.Friedbacher: Microchimica Acta 133 (2000) 119-123.
15. 803. 15. A.M.Mazzone: Ultramicroscopy 85 (2000) 15-21.
16. 804. 16. Cao B, Schaller R, Schaublin R, et al.: Mater.Sci.Forum 207 Part 2(1996) 789-792
17. 805. 17. Prenitzer BI, Urbanik-Shannon CA, Giannuzzi LA, Brown SR, Irwin RB, Shofner TL, Stevie FA: Microsc Microanal 9 (3) 216-236 2003

247. Á.Barna, P.B.Barna
Model considerations of ion beam thinning for preparing TEM samples
Proc. of III. Balkan Congress on Electron Microscopy, Athens, Greece, 1989 pp.246-249

1. 806. 1. A.G.Dirks: Thin Solid Films 193, 201 (1990)
2. 807. 2. T.J.Vink: J.Appl.Phys. 70. 4301 (1991)
3. 808. 3. R.Anderson, J.Benedict, MRS Symp.Proc. 254 (1992) 141-148
4. 809. 4. Sáfrán Microsc Res 25 346 1993
5. 810. 5. Pischow K.A.: J Vac Sci B 12 (1994) 1716.
6. 811. 6. Berényi D., Gergely Gy., Giber J.: A felületkutatás helyzete hazánkban, A szilárdtestkutatás újabb eredményei hazánkban 24. kötet, (Akadémiai Kiadó, Budapest, 1992)

249. P.B.Barna, M.El Hiti, L.Malicskó, F.M.Reicha
On the orientation relationships of decorating gold particles on alkali halides
Phys. Stat. Sol. a. 116, (1989) 55

1. 812. 1. Weinkauf S.: Ultramicr. 46, 113 (1992)

261. G. Sáfrán, P. Keusch, J.R. Günter, P.B. Barna:
Development and properties of single crystalline silver selenide layers
Thin Solid Films 215 (1992) 147-151.

1. 813. 1. Berényi D., Gergely Gy., Giber J.: A felületkutatás helyzete hazánkban, A szilárdtestkutatás újabb eredményei hazánkban 24. kötet, (Akadémiai Kiadó, Budapest, 1992)
2. 814. 2. Kalin W.É J.Sol.St.Ch. 123, 391 (1996)
3. 815. 3. Buschmann V., Van Tandelo G. Monnoyer P., Nagy J.B.: Langmuir 14 (1998) 15281531.
4. 816. 4. Bernede J.C., Pouzet J.: VIDE 50 (270) 1-15 (1994)
5. 817. 5. Kumar MCS, Pradeep B: Semicond.Sci.Techn. 17 (3) 261-265. 2002
6. 818. 6. Kumar MCS, Pradeep B: B Mater Sci 25(5) 407-411 2002

262. G. Sáfrán, P. Keusch, J.R. Günter, P.B. Barna:
Epitaxial growth of thin silver films on water-treated NaCl surfaces
Thin Solid Films 198 (1991) 331-338

1. 819. 1. Lu Y.F. Jpn JAP 2, 33 (1994) 1313
2. 820. 2. K.E.Harris, A.H.King: MRS Symp.Proc. 317 (1994) 425.
3. 821. 3. Swanson A.: Surf Sci 394 (1997) 221
4. 822. 4. Yang F.L.: Thin Solid Films 322 (1998) 46
5. 823. 5. Raschewski F. D 82 (Diss RWTH Aachen) Jülich 3019 (1994)
6. 824. 6. Abhilash, Nanda G, Sharma RK, et al.: Chem.Eng.Commun. 172 (1999) 65-84.

263. A. Zalar, Á. Barna, P.B. Barna, P. Panjan, S. Hofman:
The characterization of a new type of Cr/Ni multilayers structure with AES and TEM
Vacuum 42, (1991) 485

1. 825. 1. Than E., Vacuum 43 (1992) 485

267. P.B.Barna, Á.Csanády, G.Radnóczi, K.Urban, V.Timmer
Quasicrystalline phase formation in thin films
Thin Solid Films 193/194 (1990) 1-12.

1. 826. 1. Bertóti I., Tóth A., Mohai M., Révész M.: Acta Chim Hung 130 (1993) 837-855.
2. 827. 2. G.Zsigmond:Thin Solid Films 271 (1995) 26-34
3. 828. 3. Raschewski F. D 82 (Diss RWTH Aachen) Jülich 3019 (1994)
4. 829. 4. Sonsky J., et al: Czec.J.Phys. 47 (1997) 1019-1024.

276. F.M.Reicha, M.A.Hiti, P.B.Barna
Electrical properties of thin oxodixed aluminium films
J.of Mat.Sci. 26, (1991) 2007-2014.

1. 830. 1. Soliman,M.A. Polym.Bull. 27, 311 (1991)
2. 831. 2. M.M. Chetimi, J. de Chim. Phys. 89, 1173 (1992)
3. 832. 3. Delasher,, C. J Appl Phys 74 4551 1993
4. 833. 4. Qui H, Wang FP, Wu P, Pan LQ, Li LY, Xiong LY, Tian Y: Thin Solid Films 414 (1): 150-153. 2002

278. T.Friesen, J.Haupt, W.Gissler, Á.Barna, P.B.Barna
Ultrahard coatings from Ti-B-N multilayers and by co-sputtering
Surface and Coatings Technology, 48 (1991) 169-174

1. 834. 1. Djabella H. Thin Solid Films 235 156 1993
2. 835. 2. Rickerby D.G. Phil. Mag. B 68 (1993) 939
3. 836. 3. H.Djabella: Thin Solid Films 245 (1994) 27.
4. 837. 4. Schlegel H.B. J.Phys.Chem. 98 (1994) 1178
5. 838. 5. S.Lopez: J.Vac.Sci.A 13 (1995) 1644.
6. 839. 6. Mitterer C, Vacuum 46 (1995) 1281 R
7. 840. 7. Ma K.J., Surf Coat 76, 297 (1995)
8. 841. 8. Yang Q.Q., Surf Coat 78, 27 (1996)
9. 842. 9. Schlegel H.B.: J.Phys. Chem. 100, 9774 (1996)
10. 843. 10. Rickerby D.G. Mater Char 36 (1996) 213
11. 844. 11. Prieto P. Surf Coat 84 (1996) 392
12. 845. 12. Derflinger VH Thin Solid Films 286 (1996) 188
13. 846. 13. Ong CW Appl.Phys.L 69 (1996) 3501
14. 847. 14. Chaleix L.: Surf Coat 91 (1997) 74
15. 848. 15. Zhao X.A.: J.Vac Sci A 15 (1997) 2297
16. 849. 16. Mitterer C.: J.Sol.St.Ch. 133 (1997) 279
17. 850. 17. Heau C.: Surf.Coat. 97 (1997) 60.
18. 851. 18. Rebholz C., Ziegele, Leyland, Matthews: J.Vac.Sci.A 16 (1998) 2851-57
19. 852. 19. Sanz J.M.: Surf. Int. An. 26 (1998) 806
20. 853. 20. R.Wiedemann, V.Weihnacht, H.Oettel,: Surf. Coat. Techn. 119 (1999) 302-309.
21. 854. 21. M.Balzer, H.Kappl, H.A.Jehn, V.Gutter: Surf. Coat. Techn. 119 (1999) 766-771.
22. 855. 22. Seal S: JOM-J MIN MET MAT S 53 (2001) 51-54

279. T.Friesen, J.Haupt, W.Gissler, Á.Barna, P.B.Barna
Hardness, stress relaxation and microstructure of Ti-B-N multilayer coatings
Vacuum 43, 657-59 (1992)

1. 856. 1. Guzman L, Elena M, Miotello A, Ossi PM, Kothari DC: VACUUM 1995;46(8-10):951-954
2. 857. 2. Mitterer C, Komendastallmaier J, Losbichler P: VACUUM 1995;46(11):1281-1294
3. 858. 3. Yang Q.Q., J.Mat Sci L 15, 11 (1996)
4. 859. 4. Yang Q.Q., Surf Coat 78, 27 (1996)
5. 860. 5. Prieto P. Surf Coat 84 (1996) 392
6. 861. 6. Seal S.: J.Vac Sci A 15 (1997) 505
7. 862. 7. Mitterer C.: J.Sol.St.Ch. 133 (1997) 279
8. 863. 8. Seal S.: J.Vac.Sci.A 16 (1998) 1901.
9. 864. 9. Sanz J.M.: Surf. Int. An. 26 (1998) 806

285. Á.Csanády, P.B.Barna, B.Pécz, G.Sáfrán, O.Geszti, L.Farkas
X-TEM investigation of Al-QC layer system developed at various Mn deposition rates
Vacuum 43(5-7),673-675. (1992)

1. 865. 1. Berényi D., Gergely Gy., Giber J.: A felületkutatás helyzete hazánkban, A szilárdtestkutatás újabb eredményei hazánkban 24. kötet, (Akadémiai Kiadó, Budapest, 1992)

288. P.B.Barna
Crystal Growth and recrystallization during structure evolution of polycrystalline thin films
Diagnostics and Application of thin films (Ed. L.Eckertova, I.Ruzicka) Inst. of Physics Publishing, Bristol, (1992) pp. 295-309. 

1. 866. 1. Van Kranenburg H. Mat.Sci.E R 11 (1994) 295
2. 867. 2. T.Kanniainen: J.Mat.Chem. 5 (1995) 985.
3. 868. 3. Mitterer C, Komendastallmaier J, Losbichler P: Vacuum 46 (1995):1281-1294
4. 869. 4. G.Zsigmond:Thin Solid Films 271 (1995) 26-34
5. 870. 5. Mitterer C: J.Alloy Com 239, 183 (1996)
6. 871. 6. Derflinger VH Thin Solid Films 286 (1996) 188
7. 872. 7. Mitterer C Surf.Coat. 86-7 (1996) 715
8. 873. 8. Mitterer C.: J.Sol.St.Ch. 133 (1997) 279
9. 874. 9. C.Mitterer, P.H.Mayrhofer, M.Beschlieser, P.Losbichter, P.Warbichter, F.Hofer, P.N.Gibson, W.Gissler, H.Hruby, J.Musih, J.Vlcek: Surface and Coatings Techn. 121 (1999) 405-411.
10. 875. 10. E.Kelesoglu, C.Mitterer, M.K.Kazmauli, M.Urgen: Surface and Coatings Techn. 119 (1999) 133-140.
11. 876. 11. C.Mitterer, F.Holler, F.Ustel, D.Heim: Surf.Coat.Techn. 125 (2000) 233-239.
12. 877. 12. C.C.Chen, J.P.Yang, H.Nakai, M.Hashimoto: J.Vacuum Sci. Techn. A. 18 (2000) 81-822.

289. P.B.Barna, G.Barcza, A.Bergauer, H.Bangert
Decreasing the sensitivity of microstructure evolution in Al films against oxygen by codeposition of Sn
VUOTO, XXI.N.2. (1991) 66-70.

1. 878. 1. De Rosa H, Cardus G, Broitman E, Zimmerman R: J. Mat. Sci. Lett. 20 (2001) 1365-1367

291. Á.Csanády, P.B.Barna, B.Pécz, G.Sáfrán, O.Geszti, L.Farkas
On the processes of the solid phase reactions producing the quasicrystalline phase at the high temperature sequential deposition of Al and Mn
Revue Roumaine de Physique 36, 757-760 (1991) 

1. 879. 1. Bertóti I. Acta Chim Hung 130 (1993) 837
2. 880. 2. G.Zsigmond:Thin Solid Films 271 (1995) 26-34
3. 881. 3. Raschewski F. D 82 (Diss RWTH Aachen) Jülich 3019 (1994)

292. B.Pécz, G.Radnóczi, Zs.J.Horváth, P.B.Barna, E.Jároli, J.Gyulai
The effect of ion beam treatment and subsequent annealing on Au/GaAs contacts
J.Appl.Phys. 71 (7) 3408-3413 (1992)

882. 1. Berényi D., Gergely Gy., Giber J.: A felületkutatás helyzete hazánkban, A szilárdtestkutatás újabb eredményei hazánkban 24. kötet, (Akadémiai Kiadó, Budapest, 1992)

883. 2. Kuri G., B.Rout, B.Sundaravel, D.P.Mahapatra, B.N.Dev: Nucl.Inst.B 119 (1996) 403-410

884. 3. Kuri G., B.Sundaravel, D.P.Mahapatra, B.N.Dev: Nucl.Inst.B 129 (1997) 35-41

296. A. Sulyok, P.B. Barna, M. Menyhárd:
On the surface composition of the AlMn quasicrystal
Vacuum, 43, 477-479 (1992)

885. 1. Chang S.L., Chin W.B., Zhang C.M., et al: Surf.Sci. 337 (1995) 135-146.

298. A. Csanády, P.B. Barna, K. Urban, U. Timmer:
Formation and stability of AlMn QC thin films prepared by HTSD
Phase Transitions 44 (1993) 81-97.

886. 1. Koster U, Liu W: Phase Transit 44 (1993):137-149

887. 2. G.Zsigmond: Thin Solid Films 271 (1995) 26-34

299. P.B. Barna, A. Csanády, U. Timmer, K. Urban:
Nucleation, growth and structure of Al-Mn quasicrystalline thin films prepared by high-temperature vapour deposition
J. of Mat. Res. 7, 1115-1125 (1992)

888. 1. J.Reyes-Gasga: Thin Solid Films 230 108 1993

889. 2. Manaila R. J.Phys.Cond. 6 (1994) 2307

890. 3. Reyes-Gasga J, Garcia R: Thin Solid Films; 253 (1994):254-256

891. 4. G.Zsigmond: Thin Solid Films 271 (1995) 26-34

892. 5. Gyulai J.: J. on Communications, XLIV (1993) 36-40

893. 6. Macko D., Kasparova M.: Phil.Mag.Lett. 67 (1993) 307.

894. 7. Joulaud J.L.: Phil Mag A 75 (1997) 1287

895. 8. Raschewski F. D 82 (Diss RWTH Aachen) Jülich 3019 (1994)

896. 9. Grushko B: Heterogen Chem Rev 1: (1994) 255-269

897. 10. Wittmann R. D 82 (Diss RWTH Aachen) 1993

898. 11. Reyes-Gasga J, Pita-Larranaga A, Mondragon-Galicia G, et al.: Mat.Sci.Eng. A-Struct 294 (2000) 850-853 Sp. Iss. SI

899. 12. Kreutzer P, Anton R.: Mat.Sci.Eng. A-Struct 294 (2000) 854-858 Sp. Iss. SI

900. 13. Saito K, Yoneshima M, Sugawara S, Kamimura Y, Edagawa K: Jpn. J. Appl. Phys. Part 1 40 (6A) (2001) 4136-4140

300. B.Pécz, G. Radnóczi, P.B.Barna, É. Zsoldos:
Regrowth of thin InP surface covering layer in the Au/InP system during annealing
Appl. Phys. Lett. 61 (1) (1992) 105-107.

901. 1. L. Dobos, M. Schuszter, Z. Bodnár and I. Mojzes, Proc. of 23rd Int. Spring Seminar on Electronics Technology, (Balatonfüred, Hungary, May 6-10, 2000) 258-262

307. I. Bertóti, M. Mohai, Á. Csanády, P.B. Barna, H.Berek:
XPS studies on intermetallic phases formed in Al-Ni and Al-Mn thin films
Surf. Interface Analysis, 19, 457-463 (1992)

902. 1. A.R.Gonzalez..: J.Vac.Sci. A. 11. 58 (1993)

903. 2. Hasuyama H. Nucl Inst B 80-1 1304 1993

904. 3. Kelly R. Nucl Inst B 80-1 1154 1993

905. 4. Bertonce.. R. J NonCryst 162 205 1993

906. 5. Laidani N. J Appl Phys 74 2013 1993

907. 6. Leinen D. Appl Surf S 68 453 1993

908. 7. Maretti P. J Mater Res 8 2679 1993

909. 8. Leinen D. Surf. Int. Anal. 20 (1993) 941

910. 9. P.Sohar: Magyar Kém. Fo. 100 (1994) 469

911. 10. Tsao C.L. J.Mater. Sci. 30 (1995) 521

912. 11. Gyulai J.: J. on Communications, XLIV (1993) 36-40

913. 12. Kilner J.A.: Nucl.Inst. B.84 (1994) 176.

914. 13. A.Galtayines, J.Grimblot: J.E.Spectr.Relat.Phen. 99 (1999) 267-275.

915. 14. Yang TY, Wu SK, Shiue RK: Intermetallics 9 (2001) 341-347

916. 15. Wang CH, Chen SW, Chang CH, Wu JC: Metall Mater trans A 34 (2) 199-209 2003

308. G.Sáfrán, O.Geszti, P.B.Barna, J.R.Günter:
The role of chlorine adsorption in the low temperature epitaxial growth of silver, gold and copper on water-treated NaCl
Thin Solid Films, 229, 37-43 (1993)

917. 1. K.E.Harris, A.H.King: MRS Symp.Proc. 317 (1994) 425.

918. 2. Raschewski F. D 82 (Diss RWTH Aachen) Jülich 3019 (1994)

919. 3. M.Yandouzi, D.Schryvers, L.Tóth: Proc. EUREM 12, Brno, vol.II., p307.

920. 4. M.Yandouzi, M.Cannaerts, C.van Haesendonck, L.Tóth, D.Schryvers: Proc. EUREM 12, Brno, vol.II., p309.

921. 5. M.Yandouzi, L.Tóth, V.Vasudevan, M.Cannaerts, C.Van Haesendonck, D.Schryvers: Phil Mag Lett 80 (2000) 719-724

922. 6. Pozsgai I.: "Új módszer és eszköz a méséri pontosság és detektálási határok javítására az elektronmikroszkópos analitikában" Disszertáció. Budapest, 2003.

312. P.B.Barna
Quasicrystalline phase formation in thin films
Physica Scripta, T49, (1993) 349-355.

923. 1. G.Zsigmond: Thin Solid Films 271 (1995) 26-34

924. 2. Joulaud J.L.: Phil Mag A 75 (1997) 1287

925. 3. J.Reyes-Gasga, R.Garcia: Thin Solid Films 253 (1994) 254-56

926. 4. Kaiser U, Newcomb SB, Stobbs WM, Adamik M, Fissel A, Richter W: J.Mater.Res. 13 (1998) 3571-3579.

927. 5. P.Kreutzer, R.Anton: Mat.Sci.Eng.A-Struct. 294 (2000) 854-858 Sp.Iss.

928. 6. Grenet T, Giroud F, Joulaud JL, Capitan M: Philos Mag A 82 (16) 2909-2922 (2002)

929. 7. E.J.Widjaja, L.D.Marks: Thin Solid Films 441 (2003) 63-71.

313. H.Qiu, A.Kasuge, H.Maruyama, M.Adamik, G.Sáfrán, P.B.Barna, M.Hashimoto
Epitaxial growth, structure and properties of Ni films grown on MgO(100) by dc bias-sputter-deposition
Thin Solid Films, 241, (1994) 9-11.

930. 1. Barbier A., Renaud G., Robach O.: J.Phys. IV 8(4) (1998) 221.

931. 2. Renaud G.: Surf.Sci.R 32 (1998) 1 R

932. 3. Barbier A.: J.Appl.Phys. 84 (1998) 4259.

933. 4. I.P.McCaffrey, E.B.Svedberg, J.R.Philips, L.D.Madsley: J.Cryst.Growth 200 (1999) 498-504

934. 5. P.Sandstrom, E.B.Svedberg, J.Birch, J.E.Sundgren: J.Cryst.Growth 197 (1999) 849-57.

935. 6. G.Renaud, O.Robach, A.Barbier: Faraday Discussions 114 (1999) 157-172.

317. H.Qiu, H.Nakai, G.Sáfrán, M.Adamik, E.Yagi, P.B.Barna, M.Hashimoto:
Epitaxial growth and characterization of Ni films grown on MgO(001) by biased dc sputter deposition
J.Vac. Sci. Technol. (A), 12(5), (1994) 2855-2858.

936. 1. Campbell C.T. J.Chem.S. F. 92, 1435 (1996)

937. 2. Campbell C.T.: Surf Sci R 27 (1997) 1

938. 3. Barbier A., Renaud G., Robach O.: J.Phys. IV 8(4) (1998) 221.

939. 4. I.P.McCaffrey, E.B.Svedberg, J.R.Philips, L.D.Madsley: J.Cryst.Growth 200 (1999) 498-504

940. 5. Valeri S, Altieri S, di Bona A, Giovanardi C, Moia TS: Thin Solid Films 400 (1-2) 16-21 2001

941. 6. Lukaszew RA, Zhang ZD, Cionca C, Stoica V, Clarke R: J.Vac.Sci.Techn. A 21 (4) 1524-1527. 2003

942. 7. Lukaszew RA, Zhang ZD, Stoica V, Clarke R: Appl Surf Sci 219 (1-2) 74-79. 2003

319. E.Jároli, J.Gyulai, B.Pécz, R.Veresegyházy, G.Radnóczi, P.B.Barna:
The effect of defects caused by Xe ion bombardment on the structure of GaAs-Au contacts
Nucl.Instr. and Methods B, 80/81, (1993) 548-551

943. 1. Kuri G., Rout B, Sundaravel B, Mahapatra DP, Dev BN.: Nucl.Inst.B 119 (1996) 403-410.

944. 2. Kuri G., Sundaravel B, Mahapatra DP, Dev BN: Nucl Instr B 129 (1997) 35-41.

331. B.Pécz, G.Radnóczi, P.B.Barna
Solid phase reactions in the Au/InP system studied by TEM
Inst.Phys.Conf.Ser. No.134: Section 4, 203-206, 1993.

945. 1. J.Katcki, E.Mizera, A.Piotrowska, J.Ratajczak: Inst.Phys.Conf.Ser. 146 (1995) 557-560

340. J.Stoemenos, B.Pécz, K.Zekendes, P.B.Barna
Structural characterization of the ß-SiC/Si interface
Proc. ICEM-13, Vol. 2. 131-132. Paris, 1994

946. 1. Zhang JP: Nucl.Instrum.Meth.Phys.Res.B (1995)96(1-2):281-285

947. 2. G.Radnóczi, Á.Barna: Surface and Coatings Technology 80 (1996) 89-95

357. P.B.Barna, M.Adamik, G.Sáfrán, B.Pécz, A.Bergauer, H.Bangert:
Peculiar lamellar structure in Al single crystals grown in oxygen doped Al and Al-Sn thin films
phys.stat.sol.(a) 146. (1994) 317-324

948. 1. I.Müllerova: Proc.Multinat.Congr.El.Micr. Portoroz (1997) 297

949. 2. De Rosa H, Cardus G, Broitman E, Zimmerman R: J. Mat. Sci. Lett. 20 (2001) 1365-1367

358. M.Adamik, P.B.Barna, I.Tomov, D.Bíró:
Problems of structure evolution in polycrystalline films: correlation between grain morphology and texture formation mechanisms
phys. stat. sol. (a) 145, (1994) 275-281

950. 1. Al-Kuhaili MF: Thin Solid Films 426 (1-2) 178-185. 2003

363. K.A.Pischow, M.Adamik, P.B.Barna, A.S.Korhonen:
Cross-section x-scanning force microscopy analysis of different hard coatings and thin films
J. Vac. Sci. Technol. B. 12(3), 1716-1721 (1994)

951. 1. Cooke P.M.: Analyt.Chem. 68, 333 (1996) R

952. 2. Á. Barna, G. Radnóczi, B. Pécz: Preparation techniques for transmission electron microscopy, in Handbook of Microscopy, (eds. S. Amelinckx, D. van Dyck, J. van Landuyt, G. van Tendeloo) VCH Verlag, Vol. 3, Chapter II/3, (1997) 751-801

953. 3. M.Utriainen, H.Lattu, H.Viirola, L.Niisto, R.Resch, G.Friedbacher: Microchimica Acta 133 (2000) 119-123.

954. 4. C.Ballif, H.R.Mautinho, F.S.Hasoon, R.G.Dhere, M.M.Aliassim: Ultramicroscopy 85 (2000) 61-71.

369. K.A.Pischow, A.S.Korhonen, M.Adamik, P.B.Barna:
Ion-beam etching technique in preparation of samples for cross-sectional microscopy studies of thin films and hard coatings
Surf. Coat. Technol. 67, (1994) 95-104

955. 1. Á. Barna, G. Radnóczi, B. Pécz: Preparation techniques for transmission electron microscopy, in Handbook of Microscopy, (eds. S. Amelinckx, D. van Dyck, J. van Landuyt, G. van Tendeloo) VCH Verlag, Vol. 3, Chapter II/3, (1997) 751-801

956. 2. Koniger A Surf.Coat. 84 (1996) 439

957. 3. M.Utriainen, H.Lattu, H.Viirola, L.Niisto, R.Resch, G.Friedbacher: Microchimica Acta 133 (2000) 119-123.

372. G.Sáfrán, O.Geszti, G.Radnóczi, P.B.Barna, K.Tóth:
TEM study of the structure and morphology of AgI crystals formed on Ag(100), (110) and (111) thin films
Thin Solid Films, 259 (1995) 96-104

958. 1. P.S.Kumar, P.B.Dayal, C.S.Sunandana: Thin Solid Films 357 (1999) 111-118.

959. 2. Poppensieker J, Rothig C, Fuchs H: Adv. Funct. Mater 11 (2001) 188-192.

384. P.B.Barna, M.Adamik
Growth mechanisms of polycrystalline thin films:
Science and Technology of Thin Films, eds.: F.C.Matacotta and G.Ottaviani, World Scientific Publishing Co., (1995) p. 1-28.

960. 1. S.Sugawara, Mater. T. JIM. 37, (1996) 1293

961. 2. D.B.Bergstrom, I.Petrov, L.H.Allen, J.E.Grene, J.Appl. Phys. 63 (1997) 201

962. 3. D.B.Bergstrom, J.Appl. Phys. 82 (1997) 2312

963. 4. J.J.Delaunay: J.Appl.Phys. 82. (1997) 2200

964. 5. Zs.Czigány, I.Kovács, G.Radnóczi: Thin Solid Films 317 (1998) pp. 266-269

965. 6. Zs.Czigány, G.Radnóczi: Thin Solid Films 347 (1999) 133-145.

966. 7. R.A.Ristau, K.Barmak, K.R.Coffrey, J.K.Howard: J.Mat.Res. 14 (1999) 3263-3270.

967. 8. M.Miyasaki, J.Stoemenos: J.Appl.Phys. 86 (1999) 5556-65

968. 9. D.Jacob, F.Peiro, E.Quesnet, D.Ristau: Thin Solid Films 360 (2000) 133-138

969. 10. P.Zeman, R.Certsvy, P.H.Mayrhofer, C.Mitterer, J.Musil: Mat.Sci.Eng.A. 289 (2000) 189-197.

970. 11. Zs.Czigány, Ph.D. Theses, Budapest, (1999).

971. 12. Scardi P, Dong YH, Tosi C: J.Vac.Sci.& Techn. A 19 (2001) 2394-2399.

972. 13. Kaiser N: Appl. Optics 41 (16) 3053-3060 2002

973. 14. Hofmann K, Spangenberg B, Luysberg M, Kurz H: Thin Solid Films 436 (2): 168-174 2003

974. 15. Kluth O, Schope G, Hupkes J, Agashe C, Muller J, Rech B: Thin Solid Films 442 (1-2) 80-85. 2003

975. 16. Singh J, Wolfe DE: Mater Manuf Process 18(6) 915-927 2003

976. 17. Mirica E, Kowach G, Evans P, Du H: Crystal Growth Des 4 (1) 147-156. 2004

977. 18. Savaloni H, Shahraki MG: Nanotechnology 15(3) 311-319 2004

386. A.Bergauer, H.Bangert, Ch.Eisenmenger-Sittner, P.B.Barna:
Whisker growth on sputtered AlSn (20 wt% Sn)
Thin Solid Films 258 (1995) 115-122

978. 1. De Rosa H, Cardus G, Broitman E, Zimmerman R: J. Mat. Sci. Lett. 20 (2001) 1365-1367

387. A.Némethy, L.Kövér, I.Cserny, D.Varga, P.B.Barna:
X-ray excited KLL and KLM Auger spectra of manganese
J.of Electron Spectroscopy and Related Phenomena 70 (1995) 183-195.

979. 1. Kovalik A.: J.Elac Spec 83 (1997) 181

980. 2. Kovalik A.: J.Elac Spec 95 (1998) 1-24.

981. 3. G.Moretti: J.El.Spectr.Rel.Phen. 95 (1998) 95-114

389. G.Sáfrán, O.Geszti, P.B.Barna
Low temperature epitaxy of Au, Ag, Cu and Al on (100), (110) and (111) NaCl
Phys. stat. sol. (a), 150, (1995) 489-495

982. 1. Je J.H.: J Appl Phys 81 (1997) 6716

983. 2. P.Mexia, J.Reyes-Gasga, R.Hernández-Reyes: Electron Microscopy 1998, Proc. ICEM 14. Mexico (1998) Symposium W. Vol.II. 451-452.

391. R.Manaila, D.Bíró, P.B.Barna, M.Adamik, F.Zavalicke, S.Craciun, A.Dévényi
Ti Nitride phases in thin films deposited by DC magnetron sputtering
Appl. Surface Science,91 (1995) 295-302

984. 1. C.Carney, D.Durham: J.Vac.Sci.A 17 (1999) 2535-2540.

985. 2. C.Carney, D.Durham: J.Vac.Sci.A 17 (1999) 2850-2858.

986. 3. C.Carney, D.Durham: J.Vac.Sci.A 17 (1999) 2859-2868.

987. 4. J.C.Patterson, M.OReilly, G.M.Crean, et al: Microelectron Eng. 33 (1997) 65-73.

395. A.Duparré, C.Ruppe, K.A.Pischow, M.Adamik, P.B.Barna:
Atomic force microscopy on cross-sections of optical coatings: a new method
Thin Solid Films, 261 (1995) 70-75

988. 1. Yoon J.: J.Mat.Sci L, 15, 551 (1996)

989. 2. Radlein E.: J.Non-Cryst 222 (1997) 69

990. 3. Y.H.Ye, N.Gu, H.Q.Zhang, P.P.Chen, X.L.Tan: Thin Solid Films 346 (1999) 230-233

991. 4. C.Ballif, H.R.Mautinho, F.S.Hasoon, R.G.Dhere, M.M.Aliassim: Ultramicroscopy 85 (2000) 61-71.

992. 5. H.Arribart and D.Abriou, Proc. Glass Science and Technology for the 21st Century, Prague (1999)

993. 6. H.Arribart, D.Abriou: Ceram Silikaty 44 (2000) 121-128.

398. H.Nakai, H.Qiu, M.Adamik, G.Sáfrán, P.B.Barna, M.Hashimoto
RBS and XHRTEM characterization of epitaxial Ni films prepared by biased d.c. sputter deposition on MgO(001)
Thin Solid Films 263 (1995) 159-161

994. 1. Barbier A., Renaud G., Robach O.: J.Phys. IV 8(4) (1998) 221.

995. 2. Renaud G.: Surf.Sci.R 32 (1998) 1R

996. 3. Barbier A.: J.Appl.Phys. 84 (1998) 4259.

997. 4. McCaffrey et al: J.Cryst.Growth 200 (1999) 498-504.

998. 5. A.Barbier, G.Renaud, O.Robach: J.Phys. IV.8(5) (1998) 203-13

999. 6. Mikami Y, Yamada K, Ohnari A, Degawa T, Migita T, Tanaka T, Kawabata K, Kajioka H.:Surf. Coat Techn. 133 (2000) 295-300

1000. 7. Lin C, Xu YH, Naramoto H, Wei P, Kitazawa S, Narumi K: J.Phys.D-Appl.Phys. 35 (15) 1864-1866 2002

1001. 8. Lin C, Naramoto H, Xu YH, Kitazawa S, Narumi K, Sakai S: Thin Solid Films 443 (1-2) 28-32. 2003

400. H.Qiu, M.Hashimoto, Á.Barna, P.B.Barna:
Structural and electrical properties of Ni-Cu films deposited onto MgO(001) by d.c. biased plasma sputter deposition
Thin Solid Films, 288 (1996) 171-175

1002. 1. Mikami Y, Yamada K, Ohnari A, Degawa T, Migita T, Tanaka T, Kawabata K, Kajioka H.:Surf. Coat Techn. 133 (2000) 295-300

403. L.Kövér, P.B.Barna, R.Sanjinés, Zs.Kovács, G.Margaritondo, M.Adamik, Zs.Radi
Chemical state analysis of surface and interface segregates in coevaporated Al-Sn-O systems
Thin Solid Films 281-282 (1996) 90-93

1003. 1. Lu G.: Langmuir 14 (1998) 1532.

1004. 2. De Rosa H, Cardus G, Broitman E, Zimmerman R: J. Mat. Sci. Lett. 20 (2001) 1365-1367

404. M.Hashimoto, H.Qiu, T.Ohbuchi, M.Adamik, H.Nakai, A.Barna, P.B.Barna,
Characterization of Cobalt Films Grown on MgO(001) by Biased DC Sputter Deposition,
J. of Crystal Growth 166 (1996) 792-797.

1005. 1. Shi H.T., Lederman D.: Phys.Rev.B 58 (1998) 1778.

407. B.Pécz, N.Frangis, S.Logothetidis, L.Alexandrou, P.B.Barna, J.Stoemenos
Electron microscopy characterization of TiN films on Si, grown by d.c. reactive magnetron sputtering
Thin Solid Films, 268 (1995) 57-63

1006. 1. G.Radnóczi, Á.Barna: Surf.Coat. Technology 80 (1996) 89-95

1007. 2. Asinovsky L., Shen F., Yamaguchi T.: Thin Solid Films 313 (1998) 303-307.

1008. 3. Dimitrova V.I.: Vacuum 49 (1998) 199-204.

1009. 4. Sheu W.H., Wu S.T.: Jpn JAP1 37 (1998) 3446-3449.

1010. 5. J.W.Nah, B.J.Kim, D.K.Lee, J.J.Lee: J.Vac.Sci.Techn.A 17 (1999) 463-469.

1011. 6. X.H.Lin, X.Liu: Acta Phys.Sin-Ch Ed. 49 (2000) 2220-2224.

1012. 7. O.R.Shojaei, A.Karimi: Thin Solid Films 332 (1998) 202-208.

1013. 8. Kim KS, Jang YC, Kim KJ, Lee NE, Youn SP, Roh KJ, Roh YH: J.Vac.Sci. & Techn. A-19 (2001) 1164-1169, Part 1

1014. 9. Ma Q, Walters DR, Rosenberg RA: Appl.Surf.Sci. 185 (3-4) 217-225 (2002)

1015. 10. Banerjee R, Chandra R, Ayyub P: Thin Solid Films 405(1-2) 64-72. 2002.

1016. 11. Xu FC, Wang SJ, Lin XH, Tang DL, Zhang QH, Xue R: Chinese J. Chemical Physics 15 (1):69-74. 2002

1017. 12. Durusoy HZ, Duyar O, Aydinli A, Ay F: Vacuum 70 (1): 21-28 2003

1018. 13. Banerjee R, Singh K, Ayyub P, Totlani MK, Suri AK: J.Vac.Sci.Techn.A 21 (1) 310-317. 2003

1019. 14. Jung MJ, Nam KH, Chung YM, Boo JH, Han JG Surf Coaty Techn 171 (1-3): 71-74 1 2003

1020. 15. Thobor A, Rousselot C: Surf Coat Techn: 174: 1264-1270. 2003

1021. 16. Kajikawa Y, Noda S, Komiyama H: J Vac Sci Technol A 21 (6) 1943-1954. 2003

422. Zs.Radi, P.B.Barna, J.Lábár
Kirkendall voids and the formation of amorphous phase in the Al-Pt thin film system prepared by high temperature succesive deposition
J. Appl. Phys. 79(8) (1996) 4096-4100

1022. 1. L.Schmirgeld-Mignot, P.J.A.Molinasmata, S.Poissonet, G.Martin: Phil.Mag.Letters 80 (2000) 33-40

1023. 2. Anestiev L, Froyen L, Van Vugt L: J Mater.Sci. (9): 1907-1913. 2002

423. K.A.Pischow, J.Koskinen, M.Adamik, P.B.Barna
Cross-sectional scanning force microscopy analysis of arc-discharge-deposited diamond-like carbon films
Ceramics Inrenational, 22 (1996) 49-52.

1024. 1. Drescher D.: Diam.Relat. 7 (1998) 1375

432. E.Mounier, F.Bertin, M.Adamik, Y.Pauleau, P.B.Barna
Effect of the substrate temperature on the physical characteristics of amorphous carbon films deposited by DC magnetron sputtering
Diamond and Related Materials 5(1996) 1509-1515.

1025. 1. Peng X.L.: Thin Solid Films 312 (1998) 207.

1026. 2. Meng W.J.: J.Appl.Phys. 84 (1998) 4314

1027. 3. Schnupp R.: Biosens Bio 13 (1998) 889.

1028. 4. G.Messina, A.Paoletti, S.Santangelo, A.Tebano, A.Tucciarone: Microsystem Techn. 6 (1999) 30-36.

1029. 5. W.J.Meng, E.I.Meletis, L.E.Rehn, P.M.Baldo: J.Appl.Phys. 87 (2000) 2840-48.

1030. 6. Li YW, Chen CF, Tseng YJ: Jpn J Appl Phys 1 40 (2A) (2001) 777-782.

1031. 7. Shaginyan LR, Onoprienko AA, Britun VF, Smirnov VP: Thin Solid Films 397 (2001) 288-295

1032. 8. Music D, Kreissig U, Czigany Z, Helmersson U, Schneider JM: Appl.Phys.A 76 (2): 269-271 2003

1033. 9. Jacobsohn LG, Capote G, da Costa MEHM, Franceschini DF, Freire FL: Diam.Relat.Mater 11 (12) 1946-1951 2002

1034. 10. Cao DM, Meng W, Simko SJ, Doll GL, Wang I, Kelly KW: Thin Solid Films 429 (1-2) 46-54. 2003

1035. 11. Onoprienko AA, Artamonov VV, Yanchuk IB: Surf. Coat. Tech. 172 (2-3) 189-193 2003

1036. 12. Kang DH, Ahn DH, Kim KB, Webb JF, Yi KW: J.Appl.Phys. 94 (5) 3536-3542. 2003

1037. 13. Lee HL, Ting JM: Mater Chem Phys 82 (3) 567-570 2003

443. P.Schattschneider, H.Bangert, P.Pongratz, A.Bergauer, P.B.Barna, F.Hofer:
Structure and chemical composition of lamella in sputtered AlSn20 films
Materials Science Forum 217-222 (1996) 1667-1672

1038. 1. De Rosa H, Cardus G, Broitman E, Zimmerman R: J.of Mat.Sci.Lett. 20 (2001) 1365-1367

444. U.Kaiser, M.Adamik, G.Sáfrán, P.B.Barna, S.Laux, W.Richter:
Growth structure investigation of MgF2 and NdF3 films grown by molecular beam deposition on CaF2(111) substrates
Thin Solid Films, 280 (1996) 5-15

1039. 1. Sahoo N.K., Shapiro A.P.: Appl.Optics 37 (1998) 698

1040. 2. Zs.Czigány, G.Radnóczi: Thin Solid Films 347 (1999) 133-145.

1041. 3. D.Jacob, F.Peiro, E.Quesnet, D.Ristau: Thin Solid Films 360 (2000) 133-138

1042. 4. Zs.Czigány, Ph.D. Theses, Budapest, (1999).

445. P.B.Barna, M.Adamik:
Formation and characterisation of the structure of surface coatings
Protective Coatings and Thin Films: Synthesis, Characterisation and Applications, NATO ASI Series, 3. High Technology, Vol.21, (1997) (Eds.: Y.Pauleau and P.B.Barna, Kluwer Academic Publishers, Netherlands) pp.279-297.(Proc. NATO HTECH.ARW 950730, 1996, Portimao, Algarve, Portugal)

1. 1043. 1. Harry E.: Surf Coat 101 (1998) 291.
2. 1044. 2. Vazquez L, Ojeda F, Cuerno R, Salvarezza R, Albella JM: J. Physique IV 11 (PR3) (2001) 129-140
3. 1045. 3. Mitterer C, Holler F, Lugmair C, Nobauer R, Kullmer R, Teichert C: Surf. Coat. Techn. 142 (2001) 1005-1011
4. 1046. 4. Alonso F, Gomez-Aleixandre C, Albella JM, et al.: Vacuum 64 (3-4): 381-386 2002
5. 1047. 5. Zhang S, Sun D, Fu YQ: J.Mat.Sci.Techn. 18 (6) 485-491 2002
6. 1048. 6. Shimizu I, Setsuhara Y, Miyake S, Musil J, Saitou H, Kumagai M: Jap.JAP.I. 42 (2A): 634-639 2003
7. 1049. 7. J.Musil, J.Vlcek, P.Zeman, Y.Setsuhara, S.Miyake, S.Konuma, M.Kumagai, C.Mitterer: Jpn JAP 1. 41 (11A) 6529-6533 2002
8. 1050. 8. Carvalho S, Ribeiro E, Rebouta L, Vaz F, Alves E, Schneider D, Cavaleiro A: Surf Coat Techn 174: 984-991. 2003

450. M.Adamik, G.Sáfrán, P.B.Barna, U.Kaiser, S.Laux, W.Richter
Structure characteristics of stratified and single fluoride optical coatings
EUROPTO 96, Glasgow (1996) proc. SPIE Vol.2776, 310-317

1. 1051. 1. Zs.Czigány, G.Radnóczi: Thin Solid Films 347 (1999) 133-145.
2. 1052. 2. Zs.Czigány, Ph.D. Theses, Budapest, (1999).

451. P.B.Barna, M.Adamik
Fundamental structure forming phenomena of policrystalline films and the structure zone models
Thin Solid Films (317)1-2 (1998) pp. 27-33
Proc.Conf (1995) (Salamanca)

1. 1053. 1. Knuyt G. Phys St S-B 195, 179 (1996)
2. 1054. 2. M.Miyasaki, J.Stoemenos: J.Appl.Phys. 86 (1999) 5556-65
3. 1055. 3. Shieh J, Hon MH: Thin Solid Films 391 (2001) 101-108.
4. 1056. 4. Rodriguez-Navarro AB: Thin Solid Films 389 (2001) 288-295.
5. 1057. 5. Lucadamo G, Barmak K, Rodbell KP: J.Mater.Res. 16 (2001) 1449-1459.
6. 1058. 6. L.Zambov, B.Caussat, R.Boubeker, J.P.Couderc: J.Physiue IV 11(PR3) (2001) 89-196
7. 1059. 7. Angloher G, Huber M, Jochum J, von Feilitzsch F, Mossbauer RL, Safran G: J. Low Temp. Phys. 123 (2001) 165-180
8. 1060. 8. Shieh J, Hon MH: J Vac. Sci. Techn. A 20 (1): 87-92 (2002)
9. 1061. 9. Garces G, Adeva P: J Mater Res 17 (3): 614-619 2002.
10. 1062. 10. Shieh H, Wang HL, Tsai MS, et al.: J.Am.Ceram.Soc. 85(3) 636-640, 2002.
11. 1063. 11. Aguilar M, Quintana P, Oliva AI: Mater Manuf Process 17 (1): 57-65 (2002)
12. 1064. 12. Rauch JY, Rousselot C, Martin N: Surf. Coat. Tech. 157 (2-3) 138-143 (2002)
13. 1065. 13. Stoiber M, Badisch E, Lugmair C, Mitterer C: Surf. Coat. Tech. 163 451-456 2003
14. 1066. 14. Myung HS, Lee HM, Shaginyan LR, Han JG: Surf. Coat. Tech. 163: 591-596 2003
15. 1067. 15. Lin SS, Huang JL: J.Mat.Res. 18 (4) 965-972 2003
16. 1068. 16. Lee EYM, Tran NH, Russell JJ, Lamb RN: J.Phys.Chem.B 107 (22) 5208-5211. 2003
17. 1069. 17. Rubio JE, Jaraiz M, Martin-Bragado I, Hernandez-Mangas JM, Barbolla J, Gilmer GH: J.Appl.Phys. 94 (1) 163-168. 2003
18. 1070. 18. Barmak K, Gungor A, Cabral C, Harper JME: J.Appl.Phys. 94 (3) 1605-1616. 2003
19. 1071. 19. Lin SS, Huang JL: J Mater Res 18 (8) 1943-1949. 2003
20. 1072. 20. Lintymer J, Gavoille J, Martin N, Takadoum J: Surf. Coat. Tech. 174: 316-323. 2003
21. 1073. 21. Birkholz M, Selle B, Fenske F, Fuhs W: Phys Rev B 68 (20): art. no. 205414 2003
22. 1074. 22. Li ZG, Miyake S, Kumagai M, Saito H, Muramatsu Y: Jpn J Appl. Phys 1 42 (12) 7510-7515 2003
23. 1075. 23. Mirica E, Kowach G, Du H: Crystal Growth Des 4 (1): 157-159 2004
24. 1076. 24. Colligon JS: Philos T Roy Soc A 362 (1814) 103-116. 2004
25. 1077. 25. Yau BS, Huang JL, Lii DF, Sajgalik P: Surf Coat Techn 177: 209-214. 2004

454. G.Sáfrán, O.Geszti. G.Radnóczi, P.B.Barna
TEM study of Ag2Se developed by the reaction of polycrystalline silver films and selenium
Thin Solid Films (317)1-2 (1998) pp.72-76

1. 1078. 1. M.C.S.Kumar, B.Pradeep: Materials Letters 56 (4): 491-495 2002
2. 1079. 2. Gates B, Mayers B, Wu YY, Sun YG, Cattle B, Yang PD, Xia YN: Advanced Functional Materials 12 (10) 679-686 2002

471. M.Adamik, P.B.Barna, I.Tomov
Columnar structures in polycrystalline thin films developed by competitive growth
Thin Solid Films (317)1-2 (1998) pp. 64-68 

1. 1080. 1. T.Chraska, A.H.King: J.Mat.Sci.Lett. 18 (1999) 1517-1519.
2. 1081. 2. X.H.Wang, F.Zhang, Z.H.Zheng, C.R.Li, L.Z.Chen, H.M.Wang, X.H.Liu: Materials Letters 44 (2000) 105
3. 1082. 3. X.H.Wang, F.Zhang, C.R.Li, Z.H.Zheng, L.Z.Chen, H.M.Wang, X.H.Liu: Materials Letters 45 (2000) 1-5
4. 1083. 4. Rodriguez-Navarro AB: Thin Solid Films 389 (2001) 288-295.
5. 1084. 5. Chraska T, King AH: Thin Solid Films 397 (2001) 30-39
6. 1085. 6. Angloher G, Huber M, Jochum J, von Feilitzsch F, Mossbauer RL, Safran G: J. Low Temp. Phys. 123 (2001) 165-180
7. 1086. 7. Garces G, Adeva P: J Mater Res 17 (3): 614-619 2002.
8. 1087. 8. Al-Kuhaili MF: Thin Solid Films 426 (1-2) 178-185. 2003
9. 1088. 9. Lee EYM, Tran NH, Russell JJ, Lamb RN: J.Phys.Chem.B 107 (22) 5208-5211. 2003
10. 1089. 10. Carvalho S, Ribeiro E, Rebouta L, Vaz F, Alves E, Schneider D, Cavaleiro A: Surf Coat Techn 174: 984-991. 2003

479. P.B.Barna, Y.Pauleau
Conclusions of the NATO-ARW and directions for future research and development on protective coatings.
Protective Coatings and Thin Films: Synthesis, Characterisation and Applications, NATO ASI Series, 3. High Technology, Vol.21, (1997) (Eds.: Y.Pauleau and P.B.Barna, Kluwer Academic Publishers, Netherlands) pp.659-660.

1. 1090. 1. Donnet C.: Surf Coat 94-5 (1997) 456
2. 1091. 2. Zhang WG, Liu WM, Wang CT: J.European Ceramic Soc. 22 (16) 2869-2876. 2002

480. A.Némethy, L.Kövér, I.Cserny, D.Varga, P.B.Barna:
The KLL and KLM Auger spectra of 3d transition metals, Z=23-26
J.of Electron Spectroscopy and Related Phenomena 82 (1996) 31-40.

1. 1092. 1. G.Moretti: J.Electron Spectrosc 95 (1998) 95-144.
2. 1093. 2. A.Kovalik, VM.Gorozhankin, T.Vylov, DV.Filosofov, N.Coursol, EA.Yakushev, C.Briancon, A.Minkova, M.Rysavy, O.Dragoun: J.Electron Spectroscopy and Related Phenomena 95 (1998) 1-24.
3. 1094. 3. NH.Turner, JA.Schreifels: Anal.Chem.70: (1998) 229R-250R
4. 1095. 4. Palmeri P, Mendoza C, Kallman TR, Bautista MA, Melendez M: Astron Astrophys 410 (1): 359-364. 2003

510. M.Adamik, P.B.Barna and I.Tomov:
Ultrasharp Textures in Al/Ti Layered Structures,
Surf.Coat.Technol., 100-101, (1998) 338-340.( 333-335)
(Proc.Symposium om Coatings and Surface Modifications for Surface Protection and Tribological Applications, Strasbourg, 1997.)

1. 1096. 1. Lucadamo G, Barmak K, Rodbell KP: J. Mat. Res. 16 (2001): 1449-1459
2. 1097. 2. Yoo S, Kim YH, Yoon CS: J. Vac. Sci. Techn. B 19 (2001) 856-858
3. 1098. 3. Dobrzanski LA, Lukaszkowicz K, Cunha L: Mater Sci Forum 437-4. 199-202. 2003

517. M.Adamik, I.Tomov and P.B.Barna:
Texture Evolution in Stratified Al Thin Films,
Solid State Phenomena 56 (1997) 213-218.

1. 1099. 1. Lucadamo G, Barmak K, Rodbell KP: J.Mater.Res. 16 (2001) 1449-1459.

531. H.Maruyama, H.Qiu, M.Hashimoto, K.Fudaba, H.Nakai, Á.Barna, P.B.Barna
FMR, XRD and XHRTEM characterization of stresses in an epitaxial Ni-Cu film prepared on MgO(001) by d.c. biased plasma sputter deposition
Thin Solid Films 299 (1997) 59-62

1. 1100. 1. Bai MW, Kato K, Umehara N, Miyake Y: Thin Solid Films 377 (2000) 138-147.
2. 1101. 2. Tang W, Xu KW, Wang P, Li M: Mater Lett 57 (20) 3101-3106 2003

537. P.B.Barna, M.Adamik, U.Kaiser, H.Hobert:
Preparation of Polycrystalline and Microcrystalline Germanium Composite Films by Codeposition of Active Additives,
J. Noncryst. Solids, 227-230 (1998) 1063-1068.

1. 1102. 1. Li ZG, He JL, Matsumoto T, Mori T, Miyake S, Muramatsu Y: Surf Coat Techn 174: 1140-1144 2003
2. 1103. 2. Li ZG, Miyake S, Kumagai M, Saito H, Muramatsu Y: Jpn J Appl. Phys 1 42 (12) 7510-7515 2003

547. T.Ohbuchi, M.Ishino, K.Makihara, H.Qiu, M.Hashimoto, Á.Barna, P.B.Barna:
Structural and electrical properties of Ni-Co films dc-biased plasma-sputter-deposited on MgO(001)
Thin Solid Films 312 (1998) 32-36.

1. 1104. 1. Valeri S, Altieri S, di Bona A, Giovanardi C, Moia TS: Thin Solid Films 400 (1-2): 16-21. 2001

572. J.P.Yang, K.Makihara, H.Nakai, M.Hashimoto, Á.Barna, P.B.Barna:
Growth structure of nickel films on GaAs(001) by d.c.-biased plasma-sputter-deposition
Thin Solid Films 319 (1998) 115-119.

1. 1105. 1. Y.Mikami, K.Yamada, A.Ohnari, T.Degawa, T.Migita, T.Tanaka, K.Kawabata, H.Kajioka: Surf.Coat.Techn. 133 (2000) 295-300.

575. J.Kovac, F.Uherek, A.Satka, J.Waclawek, J.Jakubovic, R.Sranek, B.Rheinländer, V.Gottschalch, S.Hasenöhrl, J.Novák, P.B.Barna, Á.Barna, J.Wood:
InAlGaAs-InGaAs-InP RCE PIN photodiode for 1300 nm Wavelength region
Proc. of IPRM'96 Conf. Schwäbisch Gmünd, Germany (1996) 219-222.

1. 1106. 1.J.A.Jervase, H.Bourdoucen: IEEE J.Quantum Electronics 36 (2000) 325-332.

603. J.Yang, Á.Barna, K.Makihara, M.Hashimoto, P.B.Barna:
Growth structure and properties of Fe rich Fe-Ni alloy fims deposited on MgO(001) by d.c.-biased plasma sputtering
Thin Solid Films 347 (1999) 85-90.

1. 1107. 1. Blixt AM, Andersson G, Lu J, Hjorvarsson B: J.Phys.-Condensed Mat.15 (4): 625-633 2003

618. M.Adamik, P.B.Barna and I.Tomov:
Correlation between Texture and Average Grain Size in Polycrystalline Ag Thin Films,
Thin Solid Films, 359 (2000) 33-38.

1. 1108. 1. Rizzo A, Tagliente MA, Alvisi M, Scaglione S: Thin Solid Films 396 (2001) 29-35
2. 1109. 2. Durose K, Boyle D, Abken A, Ottley CJ, Nollet P, Degrave S, Burgelman M, Wendt R, Beier J, Bonnet D: Physica Status Solidi B 229 (2): 1055-1064 (2002)
3. 1110. 3. Zhang JM, Xu KW, Ji V: Appl. Surf. Sci. 187 (1-2) 60-67. 2002
4. 1111. 4. Zhang JM, Xu KW: Acta Physica Sinica 52 (1) 145-149 2003
5. 1112. 5. Zhang JM, Xu KW, Zhang MR: Acta Physica Sinica 52 (5) 1207-1212 2003
6. 1113. 6. Lee EYM, Tran NH, Russell JJ, Lamb RN: J.Phys.Chem.B 107 (22) 5208-5211. 2003

619. P.B.Barna, M.Adamik, J.L.Lábár, L.Kövér, J.Tóth, A.Dévényi, R.Manaila:
Formation of polycrystalline and Microcystalline Composite Thin Films by Codeposition and Surface Chemical Reaction,
(E-MRS 1999 spring Meeting, Strassbourg)
Surf.Coat.Technol., 125 (2000) 147-150.

1. 1114. 1. Laidani N, Micheli V, Anderle M: Thin Solid Films 382 (2001) 23-29.
2. 1115. 2. Carvalho S, Rebouta L, Cavaleiro A, Rocha LA, Gomes J, Alves E: Thin Solid Films 398 (2001) 391-396
3. 1116. 3. Vaz F, Rebouta L: Mat., Sci. Forum 383. 143-149 2002
4. 1117. 4. Pauleau Y, Thiery F: Mater. Lett. 56 (6) 1053-1058. 2002
5. 1118. 5. Zhang S, Sun D, Fu YQ: J.Mat.Sci.Techn. 18 (6) 485-491 2002
6. 1119. 6. Zhang S, Sun D, Fu YQ, Du HJ: Surf.Coat.Technol. 167 (2-3): 113-119 2003
7. 1120. 7. ZG.Li, JL.He, T.Matsumoto, T.Mori, S.Miyake, Y.Muramatsu: Surface and Coatings Technology 174. 1140-1144. 2003
8. 1121. 8. Li ZG, Miyake S, Kumagai M, Saito H, Muramatsu Y: Jpn J Appl. Phys 1 42 (12) 7510-7515 2003
9. 1122. 9. Colligon JS: Philos T Roy Soc A 362 (1814) 103-116. 2004
10. 1123. 10. Carvalho S, Rebouta L, Ribeiro E, Vaz E, Denannot MF, Pacaud J, Riviere JR, Paumier E, Gaboriaud RJ, Alves E: Surf Coat Techn 177: 369-375 2004

626. R.Popescu, D.Macovei, A.Dévényi, R.Manaila, P.B.Barna, A.Kovács, J.Lábár:
Metal-clusters in metal/C60 thin film nanosystems,
European Physical Journal B, 13 (2000) 737-743.

1. 1124. 1. Zhao ZJ, Wang HQ, Wang B, Hou JG, Liu GL, Jin XF: Phys.Rev.B 65 (23): art. no. 235413 2002
2. 1125. 2. Ziegler KJ, Harrington PA, Ryan KM, Crowley T, Holmes JD, Morris MA: J.Physics-Condens Matt 15(49) 8303-8314 2003

628. R.Manaila, D.Macovei, R.Popescu, A.Dévényi, A.Jianu, E.Vasile, V.Popa, B.P.Barna, J.L.Lábár:
Nano-icosahedral Al-Mn-Ce phases: structure and local configurations
Materials Science and Engineering A 294 (2000) 82-85.

1. 1126. 1. Schurack F, Eckert J, Schultz L: Phil.Mag. 83 (7): 807-825 2003
2. 1127. 2. Li JC, Zhao ZK, Jiang Q: Adv.Engeneering Materials 5 (3): 119-122 2003

654. G.Radnóczi, P.B.Barna, M.Adamik, Zs.Czigány, J.Ariake, N.Honda, K.Ouchi:
Growth structure of thin films for perpendicular magnetic recording media
Cryst.Res.Technol. 35 (2000) 707-711.

1. 1128. 1. C.L.Platt, K.W.Wierman, Klemmer TJ, Howard JK, Smith DJ: J.Magn.Magn.Mat. 247 (2) 153-158 2002
2. 1129. 2. Lisboa-Filho PN, Zenatti A, Casali GM, Paskocimas CA, Ortiz WA, Leite ER, Longo E: J.Sol-Gel Sci. Techn. 24 (3): 241-245 2002

667. K.Yamaguchi, Y.Yasuda, A.Kovács, P.B.Barna
Anisotropic surface segregation of indium atoms in molecular beam epitaxy of InGaAs/GaAs quantum wells
J.Appl.Phys. 89 (2001) 217-220.

1. 1130. 1. Shin B, Lita B, Goldman RS, Phillips JD, Bhattacharya PK: Appl.Phys.Letters 81 (8): 1423-1425. 2002

678. I.Shi, D.Ishii, M.Hashimoto, Á.Barna, P.B.Barna, Y.Haga, O.Nittino:
Growth behavior and microstructure of Co-Ge films prepared on GaAs substrate by High-temperature sequential deposition
J.Crystal Growth 222 (2001) 235-242.

1. 1131. 1. Goldfarb I, Briggs GAD: J.Vacuum Sci Techn B 20(4) 1419-26 2002

689. C.Eisenmenger-Sittner, H.Bangert, H.Störi, J.Brenner, P.B.Barna:
Stranski-Krastanov growth of Sn on polycrystalline Al film surface initiated by the wetting of Al by Sn
Surface Science 489 (2001) 161-168.

1. 1132. 1. Muller P: Russ J Phys Chem+ 77 S135-S142 Suppl. 1 2003
2. 1133. 2. Shimoda M, Guo JQ, Sato TJ, Tsai AP: J Non-Cryst Solids 334: 505-508. 2004

701. R.Manaila, A.Dévényi, D.Bíró, L.Dávid, P.B.Barna, A.Kovács:
Multilayer TiAlN coatings with composition gradient
Surface and Coatings Technology 151-152 (2002) 21-25. CRMC

1. 1134. 1. PalDey S, Deevi SC: Mat Sci Eng A 361 (1-2): 1-8. 2003

704. J.L.Lábár, A.Kovács, P.B.Barna, P.Gas:
Formation of metastable phases during heat treatment of multilayers in the Al-Pt system
J.Appl.Phys. 90 (12)(2001) 6545-6547.

1. 1135. 1. Gonzalez-Silveira M, Clavaguera-Mora MT, Pi F, Rodriguez-Viejo J: Phys. Rev. B 69, 113411 (2004)

712. T.Grenet, F.Giroud, K.Loubet, A.Bergman, G.Sáfrán, J.Lábár, P.Barna, J.L.Joulaud, M.Capitan
Fabrication and transport properties of thin films of quasicrystals
Journal of Alloys and Compounds, 342 (2002) 2-6.

1. 1136. 1. Huttunen-Saarivirta E, Turunen E, Kallio M: Journal of Alloys and Compounds 354 (1-2) 269-280 2003
2. 1137. 2. E.J.Widjaja, L.D.Marks: Thin Solid Films 441 (2003) 63-71.

Last modified: 20th of August, 2010